參數(shù)資料
型號： HYB25D256160TCL-75
廠商： INFINEON TECHNOLOGIES AG
英文描述： MEMORY SPECTRUM
中文描述： 記憶譜
文件頁數(shù)： 46/94頁
文件大?。?/td> 3326K
代理商： HYB25D256160TCL-75
HYB25D256[16/40/80]0C[E/C/F/T](L)
256 Mbit Double-Data-Rate SDRAM
Functional Description
Data Sheet
50
Rev. 1.6, 2004-12
Figure 25
Write to Read: Nominal DQSS, Interrupting (CAS Latency = 2; Burst Length = 8)
T1
T2
T3
T4
T5
T6
tDQSS (nom)
NOP
Read
Write
NOP
DI a-b = data in for bank a, column b.
An interrupted burst is shown, 4 data elements are written.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
tWTR is referenced from the first positive CK edge after the last desired data in pair.
The Read command masks the last 2 data elements in the burst.
A10 is Low with the Write command (Auto Precharge is disabled).
The Read and Write commands are not necessarily to the same bank.
DI a-b
CK
Command
Address
DQS
DQ
DM
Don’t Care
BAa, COL b
BAa, COL n
tWTR
CL = 2
1 = These bits are incorrectly written into the memory array if DM is low.
1
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