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參數(shù)資料
| 型號(hào)： | HYB25D256160CE-5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 256 Mbit Double Data Rate SDRAM |
| 中文描述： | 256兆雙倍數(shù)據(jù)速率SDRAM |
| 文件頁數(shù)： | 24/94頁 |
| 文件大?。?/td> | 3326K |
| 代理商： | HYB25D256160CE-5 |
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HYB25D256[16/40/80]0C[E/C/F/T](L)
256 Mbit Double-Data-Rate SDRAM
Functional Description
Data Sheet
30
Rev. 1.6, 2004-12
3.5
Operations
3.5.1
Bank/Row Activation
Before any Read or Write commands can be issued to a bank within the DDR SDRAM, a row in that bank must
be “opened” (activated). This is accomplished via the Active command and addresses A0-A12, BA0 and BA1 (see
Figure 7), which decode and select both the bank and the row to be activated. After opening a row (issuing an
Active command), a Read or Write command may be issued to that row, subject to the
t
RCD specification. A
subsequent Active command to a different row in the same bank can only be issued after the previous active row
has been “closed” (precharged). The minimum time interval between successive Active commands to the same
bank is defined by
t
RC. A subsequent Active command to another bank can be issued while the first bank is being
accessed, which results in a reduction of total row-access overhead. The minimum time interval between
successive Active commands to different banks is defined by
t
RRD.
Figure 7
Activating a Specific Row in a Specific Bank
Figure 8
t
RCD and tRRD Definition
RA
BA
HIGH
RA = row address.
BA = bank address.
CK
CKE
CS
RAS
CAS
WE
A0-A12
BA0, BA1
Don’t Care
ROW
ACT
NOP
COL
ROW
BA y
BA x
ACT
NOP
CK
Command
A0-A12
BA0, BA1
Don’t Care
RD/WR
tRCD
tRRD
RD/WR
NOP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB25D256160CE-5A | 256 Mbit Double Data Rate SDRAM |
| HYB25D256160CE-6 | 256 Mbit Double Data Rate SDRAM |
| HYB25D256160BC-6 | Tools, Crimp; For Use With:Crimp terminal 12-60 AWG; Crimp Tool:Hand Crimp Tool |
| HYB39S256800DC-6 | 256 MBit Synchronous DRAM |
| HYB39S256160DC-6 | 256 MBit Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB25D256160CE-5A | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:256-Mbit Double-Data-Rate SDRAM |
| HYB25D256160CE-6 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:256-Mbit Double-Data-Rate SDRAM |
| HYB25D256160CEL-6 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:256-Mbit Double-Data-Rate SDRAM |
| HYB25D256160CF-5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:256-Mbit Double-Data-Rate SDRAM |
| HYB25D256160CF-6 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:256-Mbit Double-Data-Rate SDRAM |
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