參數(shù)資料
型號(hào)： HYB25D128400AT-6
廠商： INFINEON TECHNOLOGIES AG
英文描述： 128 Mbit Double Data Rate SDRAM
中文描述： 128兆雙倍數(shù)據(jù)速率SDRAM
文件頁(yè)數(shù)： 53/79頁(yè)
文件大?。?/td> 2596K
代理商： HYB25D128400AT-6
HYB25D128[400/800/160]A-[6/7/8]
128Mbit Double Data Rate SDRAM
Electrical Characteristics
Data Sheet
53
Rev. 1.06, 2004-01
09192003-LFQ1-R60G
4.2
Normal Strength Pull-down and Pull-up Characteristics
1. The nominal pulldown V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve.
2. The full variation in driver pulldown current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
3. The nominal pullup V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the V-I curve.
4. The full variation in driver pullup current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current does not exceed 1.7, for
device drain to source voltages from 0.1 to 1.0.
6. The full variation in the ratio of the nominal pullup to pulldown current should be unity
±
10
%
, for device drain
to source voltages from 0.1 to 1.0 V.
Figure 32
Normal Strength Pull-down Characteristics
Figure 33
Normal Strength Pull-up Characteristics
0
0.5
1
1.5
2
2.5
0
20
40
60
80
100
120
140
1
O
V
DDQ
- V
OUT
(V)
Maximum
Nominal High
Nominal Low
Minimum
Maximum
Nominal High
Nominal Low
Minimum
V
DDQ -
V
out
(V)
0.5
1
1.5
2
2.5
0
0
-20
-40
-60
-80
-100
-120
-140
-160
I
O
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參數(shù)描述
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HYB25D128400ATL-6 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128 Mbit Double Data Rate SDRAM
HYB25D128400ATL-7 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128 Mbit Double Data Rate SDRAM
HYB25D128400ATL-8 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128 Mbit Double Data Rate SDRAM
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