參數(shù)資料
型號: HYB25D128160TE-5
廠商: INFINEON TECHNOLOGIES AG
英文描述: MEMORY SPECTRUM
中文描述: 記憶譜
文件頁數(shù): 48/85頁
文件大?。?/td> 3085K
代理商: HYB25D128160TE-5
HYB25D128[400/800/160]C[C/E/T](L)
128 Mbit Double Data Rate SDRAM
Functional Description
Data Sheet
48
Rev. 1.0, 2004-04
Figure 26
Write to Precharge: Non-Interrupting (Burst Length = 4)
T1
T2
T3
T4
T5
T6
t
DQSS
(max)
NOP
NOP
NOP
NOP
Write
DI a-b
PRE
DI a-b = data in for bank a, column b.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
A non-interrupted burst is shown.
t
WR
is referenced from the first positive CK edge after the last data in pair.
A10 is Low with the Write command (Auto Precharge is disabled).
CK
CK
Command
Address
DQS
DQ
DM
Don’t Care
BA a, COL b
BA (a or all)
t
WR
Maximum DQSS
T1
T2
T3
T4
T5
T6
NOP
NOP
NOP
NOP
Write
PRE
CK
CK
Command
Address
BA a, COL b
BA (a or all)
t
WR
Minimum DQSS
DI a-b
DQS
DQ
DM
t
DQSS
(min)
t
RP
t
RP
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