參數(shù)資料
型號(hào)： HYB25D128160TE-5
廠商： INFINEON TECHNOLOGIES AG
英文描述： MEMORY SPECTRUM
中文描述： 記憶譜
文件頁(yè)數(shù)： 22/85頁(yè)
文件大?。?/td> 3085K
代理商： HYB25D128160TE-5
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
HYB25D128[400/800/160]C[C/E/T](L)
128 Mbit Double Data Rate SDRAM
Functional Description
Data Sheet
22
Rev. 1.0, 2004-04
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.
When a Read or Write command is issued, a block of columns equal to the burst length is effectively selected. All
accesses for that burst take place within this block, meaning that the burst wraps within the block if a boundary is
reached. The block is uniquely selected by A1-Ai when the burst length is set to two, by A2-Ai when the burst
length is set to four and by A3-Ai when the burst length is set to eight (where Ai is the most significant column
address bit for a given configuration). The remaining (least significant) address bit(s) is (are) used to select the
starting location within the block. The programmed burst length applies to both Read and Write bursts.
3.2.2
Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the
burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the
burst type and the starting column address, as shown in
Table 5
.
Burst Type
Notes
1. For a burst length of two, A1-Ai selects the two-data-element block; A0 selects the first access within the block.
2. For a burst length of four, A2-Ai selects the four-data-element block; A0-A1 selects the first access within the
block.
3. For a burst length of eight, A3-Ai selects the eight-data- element block; A0-A2 selects the first access within
the block.
4. Whenever a boundary of the block is reached within a given sequence above, the following access wraps
within the block.
3.2.3
The Read latency, or CAS latency, is the delay, in clock cycles, between the registration of a Read command and
the availability of the first burst of output data. The latency can be programmed 2, 2.5 and 3 clocks. CAS latency
of 1.5 is supported for DDR200 components only.
If a Read command is registered at clock edge n, and the latency is
m
clocks, the data is available nominally
coincident with clock edge
n + m
(see
Figure 6
).
Reserved states should not be used as unknown operation or incompatibility with future versions may result.
Read Latency
Table 5
Burst
Length
Burst Definition
Starting Column Address
A2
A1
Order of Accesses Within a Burst
Type = Sequential
0-1
1-0
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
A0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Type = Interleaved
0-1
1-0
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
7-6-5-4-3-2-1-0
2
4
0
0
1
1
0
0
1
1
0
0
1
1
8
0
0
0
0
1
1
1
1
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參數(shù)描述
HYB25D128160TE-6 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
HYB25D128160TE-7 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
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HYB25D128160TE-7F 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
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