參數(shù)資料
型號: HYB25D128160TE-5
廠商: INFINEON TECHNOLOGIES AG
英文描述: MEMORY SPECTRUM
中文描述: 記憶譜
文件頁數(shù): 41/85頁
文件大?。?/td> 3085K
代理商: HYB25D128160TE-5
Data Sheet
41
Rev. 1.0, 2004-04
HYB25D128[400/800/160]C[C/E/T](L)
128 Mbit Double Data Rate SDRAM
Functional Description
Figure 19
Write to Write (Burst Length = 4)
T1
T2
T3
T4
T5
T6
t
DQSS
(max)
Maximum DQSS
NOP
Write
NOP
NOP
NOP
Write
DI a-b = data in for bank a, column b, etc.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
3 subsequent elements of data in are applied in the programmed order following DI a-n.
A non-interrupted burst is shown.
Each Write command may be to any bank.
CK
CK
Command
Address
DQS
DQ
DM
Don’t Care
T1
T2
T3
T4
T5
T6
Minimum DQSS
NOP
Write
NOP
NOP
NOP
Write
CK
CK
Command
Address
DQS
DQ
DM
BAa, COL b
BAa, COL n
BA, COL b
BA, COL n
t
DQSS
(min)
DI a-b
DI a-n
DI a-b
DI a-n
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