參數(shù)資料
型號: HYB18H1G321AF
廠商: QIMONDA
英文描述: GDDR3 Graphics RAM 1-Gbit GDDR3 Graphics RAM
中文描述: GDDR3顯卡內(nèi)存1千兆位GDDR3顯卡內(nèi)存
文件頁數(shù): 35/48頁
文件大小: 1406K
代理商: HYB18H1G321AF
HYB18H1G321AF–10/11/14
1-Gbit GDDR3
Internet Data Sheet
Rev. 0.92, 2007-10
06122007-MW7D-3G3M
35
5.9
Termination IV Characteristic at 240 Ohms
Figure 19
represents the ADD/CMD termination Pull-Up IV characteristic under process, voltage and temperature best and
worst case conditions. The actual ADD/CMD termination Pull-Up current must lie between these two bounding curves. The
value of the external ZQ resistor is 240
Ω
, setting the nominal termination impedance to 240
Ω
. (CKE = 1at the RES transition
during Power-Up for ADD/CMD terminations).
FIGURE 19
240 Ohm Active Termination Characteristic
Table 19
lists the numerical values of the minimum and maximum allowed values of the ADD/CMD termination IV
characteristic.
TABLE 19
Programmed Terminator Characteristics at 240 Ohm
Voltage (V)
Terminator Pull-Up Current (mA)
Voltage (V)
Terminator Pull-Up Current (mA)
Minimum
Maximum
Minimum
Maximum
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-0.41
-0.80
-1.17
-1.53
-1.87
-2.20
-2.50
-2.79
-3.06
-3.32
-0.55
-1.07
-1.58
-2.06
-2.53
-2.97
-3.40
-3.80
-4.17
-4.53
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
-3.56
-3.79
-4.01
-4.23
-4.46
-4.68
-4.90
-5.11
-4.86
-5.21
-5.50
-5.83
-6.17
-6.52
-6.88
-7.21
-7.54
-7.85
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