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參數(shù)資料
| 型號： | HYB 3117805BSJ-60 |
| 廠商： | SIEMENS AG |
| 英文描述： | 2M×8 - Bit Dynamic RAM 2k Refresh（Hyper Page Mode EDO） |
| 中文描述： | 200萬× 8 -位動態(tài)隨機存儲器（200萬× 8位動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 6/23頁 |
| 文件大?。?/td> | 176K |
| 代理商： | HYB 3117805BSJ-60 |
HYB 5(3)117805/BSJ-50/-60
2M
×
8 EDO-DRAM
Semiconductor Group
6
1998-10-01
AC Characteristics
T
A
= 0 to 70
°
C,
V
CC
= 5 V
±
10 % /
V
CC
= 3.3 V
±
0.3 V,
t
T
= 2 ns
Parameter
5, 6
Symbol
Limit Values
Unit
Note
-50
-60
min.
max. min.
max.
Common Parameters
Random read or write cycle time
t
RC
t
RP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
T
t
REF
84
–
104
–
ns
RAS precharge time
30
–
40
–
ns
RAS pulse width
50
10k
60
10k
ns
CAS pulse width
8
10k
10
10k
ns
Row address setup time
0
–
0
–
ns
Row address hold time
8
–
10
–
ns
Column address setup time
0
–
0
–
ns
Column address hold time
8
–
10
–
ns
RAS to CAS delay time
12
37
14
45
ns
RAS to column address delay
10
25
12
30
ns
RAS hold time
13
–
15
–
ns
CAS hold time
40
–
50
–
ns
CAS to RAS precharge time
5
–
5
–
ns
Transition time (rise and fall)
1
50
1
50
ns
7
Refresh period
–
32
–
32
ms
Read Cycle
Access time from RAS
t
RAC
t
CAC
t
AA
t
OEA
t
RAL
t
RCS
t
RCH
–
50
–
60
ns
8, 9
Access time from CAS
–
13
–
15
ns
8, 9
Access time from column address
–
25
–
30
ns
8, 10
OE access time
–
13
–
15
ns
Column address to RAS lead time
25
–
30
–
ns
Read command setup time
0
–
0
–
ns
Read command hold time
Read command hold time referenced to RAS
t
RRH
CAS to output in low-Z
0
–
0
–
ns
11
0
–
0
–
ns
11
t
CLZ
t
OFF
t
OEZ
0
–
0
–
ns
8
Output buffer turn-off delay
0
13
0
15
ns
12
Output turn-off delay from OE
0
13
0
15
ns
12
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB 5117805BSJ-50 | 2M×8 - Bit Dynamic RAM 2k Refresh（Hyper Page Mode EDO） |
| HYB 5117805BSJ-60 | 2M×8 - Bit Dynamic RAM 2k Refresh（Hyper Page Mode EDO） |
| HYB3117805BSJ-60 | 2M x 8-Bit Dynamic RAM 2k Refresh |
| HYB314405BJBJL-50- | 1M x 4-Bit Dynamic RAM |
| HYB314405BJ-60 | Transistor Array IC; Number of Transistors:4; Package/Case:16-SOIC; C-E Breakdown Voltage:50V; Mounting Type:Surface Mount |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3117805BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8-Bit Dynamic RAM 2k Refresh |
| HYB3117805BSJ-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM |
| HYB3118160BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3118160BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3118160BSJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
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