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參數(shù)資料
| 型號： | HYB 3117805BSJ-60 |
| 廠商： | SIEMENS AG |
| 英文描述： | 2M×8 - Bit Dynamic RAM 2k Refresh（Hyper Page Mode EDO） |
| 中文描述： | 200萬× 8 -位動態(tài)隨機(jī)存儲器（200萬× 8位動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 2/23頁 |
| 文件大?。?/td> | 176K |
| 代理商： | HYB 3117805BSJ-60 |
HYB 5(3)117805/BSJ-50/-60
2M
×
8 EDO-DRAM
Semiconductor Group
2
1998-10-01
The HYB 5(3)117805 are 16 MBit dynamic RAMs based on the die revisions “G” & “F” and
organized as 2 097 152 words by 8-bits. The HYB 5(3)117805 utilizes a submicron CMOS silicon
gate process technology, as well as advanced circuit techniques to provide wide operating margins,
both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)117805BJ
to be packaged in a standard SOJ-28 plastic packages. Package with 400 mil width are available.
These packages provide high system bit densities and are compatible with commonly used
automatic testing and insertion equipment.
Ordering Information
Type
Ordering Code
Package
Descriptions
HYB 5117805BSJ-50
Q67100-Q1104
P-SOJ-28-3 400 mil
5 V
50 ns EDO-DRAM
HYB 5117805BSJ-60
Q67100-Q1105
P-SOJ-28-3 400 mil
5 V
60 ns EDO-DRAM
HYB 3117805BSJ-50
on request
P-SOJ-28-3 400 mil
3.3 V 50 ns EDO-DRAM
HYB 3117805BSJ-60
on request
P-SOJ-28-3 400 mil
3.3 V 60 ns EDO-DRAM
Pin Names and Configuration
A0 - A10
Row Address Inputs
A0 - A9
Column Address Inputs
RAS
Row Address Strobe
OE
Output Enable
I/O1 - I/O8
Data Input/Output
CAS
Column Address Strobe
WE
V
CC
Read/Write Input
Power Supply
+ 5 V for HYB 5117800
+ 3.3 V for HYB 3117805
V
SS
N.C.
Ground (0 V)
Not Connected
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
A5
A4
OE
A9
A8
I/O5
CAS
A0
A1
A2
A3
I/O3
I/O4
WE
RAS
N.C.
A10
SS
V
CC
V
I/O8
I/O7
I/O6
SS
V
I/O1
I/O2
V
CC
A6
A7
28
27
26
SPP02803
P-SOJ-28 400 mil
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB 5117805BSJ-50 | 2M×8 - Bit Dynamic RAM 2k Refresh（Hyper Page Mode EDO） |
| HYB 5117805BSJ-60 | 2M×8 - Bit Dynamic RAM 2k Refresh（Hyper Page Mode EDO） |
| HYB3117805BSJ-60 | 2M x 8-Bit Dynamic RAM 2k Refresh |
| HYB314405BJBJL-50- | 1M x 4-Bit Dynamic RAM |
| HYB314405BJ-60 | Transistor Array IC; Number of Transistors:4; Package/Case:16-SOIC; C-E Breakdown Voltage:50V; Mounting Type:Surface Mount |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3117805BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8-Bit Dynamic RAM 2k Refresh |
| HYB3117805BSJ-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM |
| HYB3118160BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3118160BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3118160BSJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
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