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參數(shù)資料
| 型號： | HY62QF16200ALLF-I-10 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | SRAM |
| 英文描述： | 128K X 16 STANDARD SRAM, 100 ns, PBGA48 |
| 封裝： | FINE PITCH, BGA-48 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 143K |
| 代理商： | HY62QF16200ALLF-I-10 |
HY62QF16200A Series
Rev.04 /Jun. 2000
2
ORDERING INFORMATION
Part No.
Speed
Power
Temp.
Package
HY62QF16200ALLF
70/85/100
LL-part
FBGA
HY62QF16200ASLF
70/85/100
SL-part
FBGA
HY62QF16200ALLF-I
70/85/100
LL-part
I
FBGA
HY62QF16200ASLF-I
70/85/100
SL-part
I
FBGA
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
Parameter
Rating
Unit
Remark
VIN, VOUT
Input/Output Voltage
-0.2 to 3.6
V
Vcc
Power Supply
-0.2 to 4.6
V
TA
Operating Temperature
0 to 70
°C
HY62QF16200A
-40 to 85
°C
HY62QF16200A-I
TSTG
Storage Temperature
-55 to 150
°C
PD
Power Dissipation
1.0
W
TSOLDER
Ball Soldering Temperature & Time
260
10
°Csec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
I/O
/CS
/WE
/OE
/LB
/UB
Mode
I/O1~I/O8
I/O9~I/O16
Power
H
X
Deselected
High-Z
Standby
L
H
X
Output Disabled
High-Z
Active
L
X
H
Output Disabled
High-Z
Active
L
H
L
H
Read
DOUT
High-Z
Active
H
L
High-Z
DOUT
L
DOUT
L
X
L
H
Write
DIN
High-Z
Active
H
L
High-Z
DIN
L
DIN
Note:
1. H=VIH, L=VIL, X=don't care
2. UB, LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8.
When UB is LOW, data is written or read to the upper byte, I/O 9 -I/O 16.
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