參數(shù)資料
型號: HY51V18163HGT
廠商: Hynix Semiconductor Inc.
英文描述: 1M x 16Bit EDO DRAM
中文描述: 100萬× 16 EDO公司的DRAM
文件頁數(shù): 8/12頁
文件大?。?/td> 107K
代理商: HY51V18163HGT
HY51V(S)18163HG/HGL
Rev.0.1/Apr.01
8
Write Cycle
Read-Modify-Write Cycle
Refresh cycle
Parameter
Symbol
-50
-60
-70
Unit
Note
Min
Max
Min
Max
Min
Max
Write command set-up time
tWCS
0
-
0
-
0
-
ns
14,21
Write command hold time
t
WCH
8
-
10
-
13
-
ns
21
Write command pulse width
tWP
8
-
10
-
10
-
ns
Write command to /RAS lead time
t
RWL
8
-
10
-
13
-
ns
Write command to /CAS lead time
t
CWL
8
-
10
-
13
-
ns
23
Data-in set-up time
tDS
0
-
0
-
0
-
ns
15,23
Data-in hold time
tDH
8
-
10
-
13
-
ns
15,23
Parameter
Symbol
-50
-60
-70
Unit
Note
Min
Max
Min
Max
Min
Max
Read-modify-write cycle time
tRWC
111
-
136
-
161
-
ns
/RAS to /WE delay time
t
RWD
67
-
79
-
92
-
ns
14
/CAS to /WE delay time
tCWD
30
-
34
-
40
-
ns
14
Column address to /WE delay time
t
AWD
42
-
49
-
57
-
ns
14
/OE hold time from /WE
t
OEH
13
-
15
-
18
-
ns
Parameter
Symbol
-50
-60
-70
Unit
Note
Min
Max
Min
Max
Min
Max
/CAS set-up time
( /CAS-before-/RAS Refresh Cycle)
tCSR
5
-
5
-
5
-
ns
21
/CAS hold time
( /CAS-before-/RAS Refresh Cycle)
t
CHR
8
-
10
-
10
-
ns
22
/RAS precharge to /CAS hold time
( /CAS-before-/RAS Refresh Cycle)
t
RPC
5
-
5
-
5
-
ns
21
相關(guān)PDF資料
PDF描述
HY51V18163HGT-5 1M x 16Bit EDO DRAM
HY51V65163HG(HGL) 4Mx16|3.3V|4K|45|FP/EDO DRAM - 64M
HY51V65163HG Contact Conditioner; Dispensing Method:Bottle; Trade Name, Chemical:DeoxIT Gold; Volume:59ml RoHS Compliant: Yes
HY51V65163HGJ-45 4M x 16Bit EDO DRAM
HY51V65163HGJ-5 4M x 16Bit EDO DRAM
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