- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385417 > HY51V18163HGT (Hynix Semiconductor Inc.) 1M x 16Bit EDO DRAM PDF資料下載
參數(shù)資料
| 型號： | HY51V18163HGT |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 1M x 16Bit EDO DRAM |
| 中文描述： | 100萬× 16 EDO公司的DRAM |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 107K |
| 代理商： | HY51V18163HGT |
HY51V(S)18163HG/HGL
Rev.0.1/Apr.01
6
CAPACITANCE
(Vcc=3.3V +/-10%, TA=25
°
C
)
Note : 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. /CAS = V
IH
to disable D
out
AC CHARACTERISTICS
(Vcc=3.3V +/-10%, TA=0~70C, Note 1, 2, 18,19,20)
Read, Write, Read-modify-Write and Refresh Cycle
Parameter
Symbol
Min.
Max
Unit
Note
Input capacitance (Address)
CI1
-
5
pF
1
Input capacitance (Clocks)
CI2
-
7
pF
1
Output capacitance (Data-in, Data-out)
CI/O
-
7
pF
1, 2
Parameter
Symbol
-50
-60
-70
Unit
Note
Min
Max
Min
Max
Min
Max
Random read or write cycle time
t
RC
84
-
104
-
124
-
ns
/RAS precharge time
t
RP
30
-
40
-
50
-
ns
/CAS precharge time
t
CP
8
-
10
-
13
-
ns
/RAS pulse width
t
RAS
50
10,000
60
10,000
70
10,000
ns
/CAS pulse width
t
CAS
8
10,000
10
10,000
13
10,000
ns
Row address set-up time
t
ASR
0
-
0
-
0
-
ns
Row address hold time
t
RAH
8
-
10
-
10
-
ns
Column address set-up time
t
ASC
0
-
0
-
0
-
ns
21
Column address hold time
t
CAH
8
-
10
-
13
-
ns
21
/RAS to /CAS delay time
t
RCD
12
37
14
45
14
52
ns
3
/RAS to Column address delay time
t
RAD
10
25
12
30
12
35
ns
4
/RAS hold time
t
RSH
10
-
13
-
13
-
ns
/CAS hold time
t
CSH
35
-
40
-
45
-
ns
23
/CAS to /RAS precharge time
t
CRP
5
-
5
-
5
-
ns
22
Test Condition
Input rise and fall times = 2ns
Input timing refrence levels : V
IL
=0V, V
IH
=3.0V
Input timing reference level : V
IL
/V
IH
= 0.8/2.0V
Output timing reference level :
V
OL
/V
OH
=0.8/0.2V
Output load : 1 TTL gate + C
L
(100pF)
( including scope and jig )
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY51V18163HGT-5 | 1M x 16Bit EDO DRAM |
| HY51V65163HG(HGL) | 4Mx16|3.3V|4K|45|FP/EDO DRAM - 64M |
| HY51V65163HG | Contact Conditioner; Dispensing Method:Bottle; Trade Name, Chemical:DeoxIT Gold; Volume:59ml RoHS Compliant: Yes |
| HY51V65163HGJ-45 | 4M x 16Bit EDO DRAM |
| HY51V65163HGJ-5 | 4M x 16Bit EDO DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY51V65164ATC-60 | 制造商:Hyundai 功能描述: |
| HY52 | 制造商:AEARO 功能描述:HYGIENE KIT OPTIME II DEFENDER 制造商:3M Electronic Products Division 功能描述:Hygiene Kit for Optime II Ear Defender |
| HY5203-015M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Logic IC |
| HY5203-015R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Logic IC |
| HY5203-015Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Logic IC |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。