參數(shù)資料
型號(hào): HY51V18163HGT-5
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 1M x 16Bit EDO DRAM
中文描述: 1M X 16 EDO DRAM, 50 ns, PDSO44
封裝: 0.400 INCH, PLASTIC, TSOP2-50/44
文件頁數(shù): 9/12頁
文件大?。?/td> 107K
代理商: HY51V18163HGT-5
HY51V(S)18163HG/HGL
Rev.0.1/Apr.01
9
EDO Page Mode Cycle
EDO Page Mode Read-Modify-Write Cycle
Self Refresh Mode(L-version)
Parameter
Symbol
-50
-60
-70
Unit
Note
Min
Max
Min
Max
Min
Max
EDO mode cyle time
tHPC
20
-
25
-
30
-
ns
25
EDO mode /RAS pulse width
tRASP
-
100K
-
100K
-
100K
ns
16
Access time from /CAS precharge
tACP
-
30
-
35
-
40
ns
9,17,22
/RAS hold time from /CAS precharge
tRHCP
30
-
35
-
40
-
ns
Output data hold time from /CAS low
tDOH
3
-
3
-
3
-
ns
9
/CAS hold time referred /OE
tCOL
8
-
10
-
13
-
ns
/CAS to /OE setup time
tCOP
5
-
5
-
5
-
ns
Read command hold time
from /CAS precharge
tRHCP
30
-
35
-
40
-
ns
Parameter
Symbol
-50
-60
-70
Unit
Note
Min
Max
Min
Max
Min
Max
EDO Page read-modify-write cycle time
tHPRWC
57
-
68
-
79
-
ns
EDO mode read-modify-write cycle
/CAS precharge to /WE delay time
tCPW
45
-
54
-
62
-
ns
14,22
Parameter
Symbol
-50
-60
-70
Unit
Note
Min
Max
Min
Max
Min
Max
/RAS pulse width (self refresh)
tRASS
100
-
100
-
100
-
us
29
/RAS precharge time(self refresh)
tRPS
90
-
110
-
130
-
ns
/CAS hold time(self refresh)
tCHS
-50
-
-50
-
-50
-
ns
相關(guān)PDF資料
PDF描述
HY51V65163HG(HGL) 4Mx16|3.3V|4K|45|FP/EDO DRAM - 64M
HY51V65163HG Contact Conditioner; Dispensing Method:Bottle; Trade Name, Chemical:DeoxIT Gold; Volume:59ml RoHS Compliant: Yes
HY51V65163HGJ-45 4M x 16Bit EDO DRAM
HY51V65163HGJ-5 4M x 16Bit EDO DRAM
HY51V65163HGJ-6 4M x 16Bit EDO DRAM
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