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參數(shù)資料
| 型號(hào)： | HY51V18163HGT-5 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 16Bit EDO DRAM |
| 中文描述： | 1M X 16 EDO DRAM, 50 ns, PDSO44 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-50/44 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 107K |
| 代理商： | HY51V18163HGT-5 |
HY51V(S)18163HG/HGL
Rev.0.1/Apr.01
4
Truth Table
Notes :
1. H : High ( inactive) L : Low ( active) D : H or L
2. t
WCS
>= 0ns Early write cycle
twcs <
0
ns Delayed write cycle
3. Mode is determined by the OR function of the /UCAS and /LCAS (mode is set by earliest of /UCAS and /LCAS
active edge and reset by the latest of /UCAS and /LCAS inactive edge), However write operation and output
High-Z control are done independently by each /UCAS, /LCAS
ex) if /RAS = H to L, /UCAS = H, /LCAS = L, then /CAS-before-/RAS refresh cycle is selected
/RAS
/LCAS
/UCAS
/WE
/OE
Output
Operation
Notes
H
D
D
D
D
Open
Standby
1 ,3
L
L
H
H
L
Valid
Lower byte
Read cycle
1, 3
L
H
L
H
L
Valid
Upper byte
L
L
L
H
L
Valid
Word
L
L
H
L
D
Open
Lower byte
Early write cycle
1, 2, 3
L
H
L
L
D
Open
Upper byte
L
L
L
L
D
Open
Word
L
L
H
L
H
Undefined
Lower byte
Delayed write cycle
1, 2, 3
L
H
L
L
H
Undefined
Upper byte
L
L
L
L
H
Undefined
Word
L
L
H
H to L
L to H
Valid
Lower byte
Read-modify-write
Cycle
1, 3
L
H
L
H to L
L to H
Valid
Upper byte
L
L
L
H to L
L to H
Valid
Word
H to L
H
L
D
D
Open
Word
CBR refresh
or
Self refresh
(L-series)
1, 3
H to L
L
H
D
D
Open
Word
H to L
L
L
D
D
Open
Word
L
H
H
D
D
Open
Word
/RAS only refresh
cycle
1, 3
L
L
L
H
H
Open
Read cycle
(Output disabled)
1, 3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY51V65163HG(HGL) | 4Mx16|3.3V|4K|45|FP/EDO DRAM - 64M |
| HY51V65163HG | Contact Conditioner; Dispensing Method:Bottle; Trade Name, Chemical:DeoxIT Gold; Volume:59ml RoHS Compliant: Yes |
| HY51V65163HGJ-45 | 4M x 16Bit EDO DRAM |
| HY51V65163HGJ-5 | 4M x 16Bit EDO DRAM |
| HY51V65163HGJ-6 | 4M x 16Bit EDO DRAM |
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