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參數(shù)資料
| 型號(hào)： | HY29LV400BF70 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| 中文描述： | 4兆位（為512k × 8/256K × 16）低壓快閃記憶體 |
| 文件頁(yè)數(shù)： | 22/40頁(yè) |
| 文件大小： | 564K |
| 代理商： | HY29LV400BF70 |
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22
Rev. 1.0/Nov. 01
HY29LV400
DC CHARACTERISTICS
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Notes:
1. The I
current is listed is typically less than 2 mA/MHz with OE# at V
. Typical V
CC
is 3.0 V.
2. All specifications are tested with V
= V
Max unless otherwise noted.
3. I
active while the Automatic Erase or Automatic Program algorithm is in progress.
4. Not 100% tested.
5. Automatic sleep mode is enabled when addresses remain stable for t
ACC
+ 30 ns (typical).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY29LV400BF70I | 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BF90 | 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BF90I | 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BT55 | 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BT55I | 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29LV400BF70I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BF90 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BF90I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BT55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BT55I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
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