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參數(shù)資料
| 型號(hào)： | HY29LV400BF70 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| 中文描述： | 4兆位（為512k × 8/256K × 16）低壓快閃記憶體 |
| 文件頁(yè)數(shù)： | 21/40頁(yè) |
| 文件大?。?/td> | 564K |
| 代理商： | HY29LV400BF70 |
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21
Rev. 1.0/Nov. 01
HY29LV400
ABSOLUTE MAXIMUM RATINGS
4
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Notes:
1. Minimum DC voltage on input or I/O pins is
–
0.5 V. During voltage transitions, input or I/O pins may undershoot V
to
-2.0V for periods of up to 20 ns. See Figure 9. Maximum DC voltage on input or I/O pins is V
+ 0.5 V. During voltage
transitions, input or I/O pins may overshoot to V
+2.0 V for periods up to 20 ns. See Figure 10.
2. Minimum DC input voltage on pins A[9], OE#, and RESET# is -0.5 V. During voltage transitions, A[9], OE#, and RESET#
may undershoot V
to
–
2.0 V for periods of up to 20 ns. See Figure 9. Maximum DC input voltage on pin A[9] is +12.5 V
which may overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output at a time may be shorted to V
. Duration of the short circuit should be less than one second.
4. Stresses above those listed under
“
Absolute Maximum Ratings
”
may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at these or any other conditions above those indicated in the opera-
tional sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
1
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7
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5
4
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C
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6
+
6
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0
+
7
+
V
V
Notes:
1. Recommended Operating Conditions define those limits between which the functionality of the device is guaranteed.
2.0 V
V
CC
+ 0.5 V
V
CC
+ 2.0 V
20 ns
20 ns
20 ns
Figure 9. Maximum Undershoot Waveform
Figure 10. Maximum Overshoot Waveform
0.8 V
- 0.5 V
- 2.0 V
20 ns
20 ns
20 ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY29LV400BF70I | 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BF90 | 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BF90I | 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BT55 | 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BT55I | 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29LV400BF70I | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BF90 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BF90I | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BT55 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BT55I | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
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