- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299188 > HY29F002BC-45I (HYNIX SEMICONDUCTOR INC) 256K X 16 FLASH 5V PROM, 45 ns, PQCC32 PDF資料下載
參數(shù)資料
| 型號(hào)： | HY29F002BC-45I |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | PROM |
| 英文描述： | 256K X 16 FLASH 5V PROM, 45 ns, PQCC32 |
| 封裝： | PLASTIC, LCC-32 |
| 文件頁(yè)數(shù)： | 37/40頁(yè) |
| 文件大小： | 457K |
| 代理商： | HY29F002BC-45I |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)當(dāng)前第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)
6
HY29F002
Rev. 4.0/Jan. 00
Table 3. HY29F002 Bus Operations Requiring High Voltage 1, 2
Notes:
1. L = V
IL, H = VIH, X = Don’t Care.
See DC Characteristics for voltage levels.
2. Address bits not specified are Don’t Care.
3. See text for additional information.
4. SA = sector address. See Table 1.
n
o
i
t
a
r
e
p
O
3
#
E
C
#
E
O
#
E
W
#
T
E
S
E
R
]
3
1
:
7
1
[
A
]
9
[
A
]
6
[
A
]
1
[
A
]
0
[
A
]
0
:
7
[
Q
D
t
c
e
t
o
r
P
r
o
t
c
e
SL
V
D
I
XH
A
S 4
V
D
I
XXX
X
t
c
e
t
o
r
p
n
U
r
o
t
c
e
SV
D
I
V
D
I
XH
X
V
D
I
XXX
X
r
o
t
c
e
S
y
r
a
r
o
p
m
e
T
t
c
e
t
o
r
p
n
U
XXX
V
D
I
X
XXXX
X
e
d
o
C
r
e
r
u
t
c
a
f
u
n
a
ML
L
H
X
V
D
I
LLL
=
i
a
d
n
u
y
H
D
A
x
0
e
c
i
v
e
D
e
d
o
C
T
2
0
F
9
2
Y
H
LL
H
X
V
D
I
LL
H
0
B
x
0
B
2
0
F
9
2
Y
H
4
3
x
0
n
o
i
t
c
e
t
o
r
P
r
o
t
c
e
S
n
o
i
t
a
c
i
f
i
r
e
V
LL
H
A
S 4
V
D
I
LH
L
=
0
x
0
d
e
t
c
e
t
o
r
p
n
U
=
1
0
x
0
d
e
t
c
e
t
o
r
P
Low and drive WE# High for a valid read opera-
tion to take place. The device outputs the speci-
fied array data on DQ[7:0].
The HY29F002 is automatically set for reading
array data after device power-up and after a hard-
ware reset to ensure that no spurious alteration of
the memory content occurs during the power tran-
sition. No command is necessary in this mode to
obtain array data, and the device remains enabled
for read accesses until the command register con-
tents are altered.
This device features an Erase Suspend mode.
While in this mode, the host may read the array
data from or program data into any sector of
memory that is not marked for erasure. If the host
attempts to read from an address within an erase-
suspended sector, or while the device is perform-
ing an erase or byte program operation, the de-
vice outputs status data instead of array data. After
completing a programming operation in the Erase
Suspend mode, the system may once again read
array data with the same exceptions noted above.
After completing an internal program or internal
erase algorithm, the HY29F002 automatically re-
turns to the read array data mode.
The host must issue a hardware reset or the soft-
ware reset command (see Command Definitions)
to return a sector to the read array data mode if
DQ[5] goes high during a program or erase cycle,
or to return the device to the read array data mode
while it is in the Electronic ID mode.
Write Operation
Certain operations, including programming data
and erasing sectors of memory, require the host
to write a command or command sequence to the
HY29F002. Writes to the device are performed
by placing the byte address on the device’s ad-
dress inputs while the data to be written is input
on DQ[7:0]. The host system must drive the CE#
and WE# pins Low and drive OE# High for a valid
write operation to take place. All addresses are
latched on the falling edge of WE# or CE#, which-
ever happens later. All data is latched on the ris-
ing edge of WE# or CE#, whichever happens first.
The ‘Device Commands’ section of this document
provides details on the specific device commands
implemented in the HY29F002.
Output Disable Operation
When the OE# input is at V
IH, output data from the
device is disabled and the data bus pins are placed
in the high impedance state.
Standby Operation
When the system is not reading from or writing to
the HY29F002, it can place the device in the
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY29F400TR-12 | 512K X 8 FLASH 5V PROM, 120 ns, PDSO48 |
| HY5117800CT-60 | 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28 |
| HY51V64804LTC-50 | 8M X 8 EDO DRAM, 50 ns, PDSO32 |
| HY628100ALLP-70I | 128K X 8 STANDARD SRAM, 70 ns, PDIP32 |
| HY628100ALLG-85I | 128K X 8 STANDARD SRAM, 85 ns, PDSO32 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29F002BC-55 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F002BC-55E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F002BC-55I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F002BC-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F002BC-70E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。