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參數(shù)資料
| 型號： | HY27US561M |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| 中文描述： | 片256Mbit（32Mx8bit / 16Mx16bit）NAND閃存 |
| 文件頁數(shù)： | 29/44頁 |
| 文件大小： | 733K |
| 代理商： | HY27US561M |
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Rev 0.7 / Oct. 2004
29
HY27SS(08/16)561M Series
HY27US(08/16)561M Series
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
Table 15: AC Characteristics for Operation (3.3V Device and 1.8V Device)
Alt.
Sym-
bol
Sym-
bol
Parameter
3.3V
Device
1.8V
Device
Unit
t
ALLRL1
t
AR1
Address Latch Low to Read En-
able Low
Read Electronic Signature
Min
10
ns
t
ALLRL2
t
AR2
Read cycle
Min
50
ns
t
BHRL
t
RR
Ready/Busy High to Read Enable Low
Min
20
ns
t
BLBH1
t
R
Ready/Busy Low to Ready/
Busy High
Read Busy time, 128Mb,
256Mb
Max
10
us
t
BLBH2
t
PROG
Program Busy time
Max
500
us
t
BLBH3
t
BERS
Erase Busy time
Max
3
ms
t
BLBH4
t
RST
Reset Busy time, during
ready
Max
5
us
Reset Busy time, during read
Max
5
us
Reset Busy time, during pro-
gram
Max
10
us
Reset Busy time, during
erase
Max
500
us
t
CLLRL
t
CLR
Command Latch Low to Read Enable Low
Min
10
ns
t
DZRL
t
IR
Data Hi-Z to Read Enable Low
Min
0
ns
t
EHBH
t
CRY
Chip Enable High to Ready/Busy High (CE intercepted read)
Max
60+tr
(1)
ns
t
EHEL
t
CEH
Chip Enable High to Chip Enable Low
(2)
Min
100
ns
t
EHQZ
t
CHZ
Chip Enable High to Output Hi-Z
Max
20
ns
t
ELQV
t
CEA
Chip Enable Low to Output Valid
Max
45
ns
t
RHBL
t
RB
Read Enable High to Ready/Busy
Low
Max
100
ns
t
RHRL
t
REH
Read Enable High to Read
Enable Low
Read Enable High Hold time
Min
15
ns
t
RHQZ
t
RHZ
Read Enable High to Output Hi-Z
Min
15
ns
Max
30
t
RLRH
t
RP
Read Enable Low to Read Enable
High
Read Enable Pulse Width
Min
30
ns
t
RLRL
t
RC
Read Enable Low to Read Enable
Low
Read Cycle time
Min
50
60
ns
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PDF描述 |
|---|---|
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY27USXXX | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
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| HY29DL162BF-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory |
| HY29DL162BF-12I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory |
| HY29DL162BF-70 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory |
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