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參數(shù)資料
| 型號： | HUF75623S3ST |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 22A, 100V, 0.064 Ohm, N-Channel,UltraFET Power MOSFETs(22A, 100V, 0.064 Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
| 中文描述： | 22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 164K |
| 代理商： | HUF75623S3ST |
1
TM
File Number
4804.1
HUF75623P3, HUF75623S3ST
22A, 100V, 0.064 Ohm, N-Channel,
UltraFET Power MOSFETs
Packaging
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.064
,
V
GS
=
10V
Simulation Models
- Temperature Compensated PSPICE
and SABER
Electrical Models
- Spice and SABER
Thermal Impedance Models
- www.intersil.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
DRAIN
(FLANGE)
GATE
SOURDRAIN
HUF75623P3
JEDEC TO-220AB
JEDEC TO-263AB
HUF75623S3ST
GATE
SOURCE
DRAIN
(FLANGE)
D
G
S
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75623P3
TO-220AB
75623P
HUF75623S3ST
TO-263AB
75623S
NOTE: When ordering, use the entire part number i.e., HUF75623P3
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HUF75623P3, HUF75623S3ST
100
100
±
20
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTE:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
22
15
Figure 4
A
A
Figures 6, 14, 15
85
0.57
-55 to 175
W
W/
o
C
o
C
300
260
o
C
o
C
Data Sheet
August 2000
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET is a registered trademark of Intersil Corporation. PSPICE is a registered trademark of MicroSim Corporation.
SABER is a trademark of Analogy, Inc.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
Copyright Intersil Corporation 2000
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| HUF75631P3 | 功能描述:MOSFET 33a 100V N-Ch UltraFET 0.40 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75631S3S | 功能描述:MOSFET 100V NCh PowerMOSFET UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75631S3ST | 功能描述:MOSFET 100V NCh PowerMOSFET UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75631SK8 | 功能描述:MOSFET USE 512-FDS3682 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75631SK8T | 功能描述:MOSFET 100V NCh PowerMOSFET UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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