參數(shù)資料
型號： HS1-65647RH-8
廠商： HARRIS SEMICONDUCTOR
元件分類： SRAM
英文描述： Radiation Hardened 8K x 8 SOS CMOS Static RAM
中文描述： 8K X 8 STANDARD SRAM, 50 ns, CDIP28
文件頁數(shù)： 4/16頁
文件大?。?/td> 110K
代理商： HS1-65647RH-8
827
Specifications HS-65647RH
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2, 3)
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Address Access Time
TAVQV
VDD = 4.5V
9, 10, 11
-55
o
C, +25
o
C, +85
o
C, +125
o
C
-
50
ns
Output Enable Access Time
TGLQV
VDD = 4.5V
9, 10, 11
-55
o
C, +25
o
C, +85
o
C, +125
o
C
-
15
ns
Chip Enable Access Time
TE1LQV
TE2HQV
VDD = 4.5V
9, 10, 11
-55
o
C, +25
o
C, +85
o
C, +125
o
C
-
50
ns
Write Recovery Time
TWHAX
TE1HAX
TE2LAX
VDD = 4.5V
9, 10, 11
-55
o
C, +25
o
C, +85
o
C, +125
o
C
0
-
ns
Chip Enable to End-of-Write
TE1LE1H
TE2HE2L
VDD = 4.5V
9, 10, 11
-55
o
C, +25
o
C, +85
o
C, +125
o
C
35
-
ns
Address Setup Time
TAVWL
TAVE1L
TAVE2H
VDD = 4.5V
9, 10, 11
-55
o
C, +25
o
C, +85
o
C, +125
o
C
5
-
ns
Write Enable Pulse Width
TWLWH
VDD = 4.5V
9, 10, 11
-55
o
C, +25
o
C, +85
o
C, +125
o
C
25
-
ns
Data Setup Time
TDVWH
VDD = 4.5V
9, 10, 11
-55
o
C, +25
o
C, +85
o
C, +125
o
C
30
-
ns
TDVE1H
TDVE2L
VDD = 4.5V
9, 10, 11
-55
o
C, +25
o
C, +85
o
C, +125
o
C
30
-
ns
Data Hold Time
TWHDX
VDD = 4.5V
9, 10, 11
-55
o
C, +25
o
C, +85
o
C, +125
o
C
0
-
ns
Address Hold Time
TAVE1H
TAVE2L
VDD = 4.5V
9, 10, 11
-55
o
C, +25
o
C, +85
o
C, +125
o
C
40
-
ns
TE2LDX
TE1HDX
VDD = 4.5V
9, 10, 11
-55
o
C, +25
o
C, +85
o
C, +125
o
C
0
-
ns
NOTES:
1. AC measurements tested at worst case VDD. Guaranteed over full operating range.
2. AC measurements assume transition time
≤
5ns; input levels = 0.0V to VDD; timing reference levels = 2.0V; output load = 1 TTL equivalent
load and CL
≥
50pF, for CL > 50pF, access times are derated 0.15ns/pF.
3. For timing waveforms, see Low Voltage Data Retention and Read/Write Cycles.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input Capacitance
CIN
VDD = Open, f = 1MHz
1, 2, 4
T
A
= +25
o
C
-
12
pF
VDD = Open, f = 1MHz
1, 2, 4
T
A
= +25
o
C
-
12
pF
I/O Capacitance
CI/O
VDD = Open, f = 1MHz
1, 2, 4
T
A
= +25
o
C
-
12
pF
VDD = Open, f = 1MHz
1, 2, 4
T
A
= +25
o
C
-
12
pF
Write Enable to Output in
High Z
TWLQZ
VDD = 4.5V and 5.5V
1
-55
o
C
≤
T
A
≤
+125
o
C
-
10
ns
Spec Number
518729
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