參數(shù)資料
型號(hào)： HPC167064EL20
廠商： NATIONAL SEMICONDUCTOR CORP
元件分類： 微控制器/微處理器
英文描述： High-Performance microController with a 16k UV Erasable CMOS EPROM
中文描述： UVPROM, MICROCONTROLLER, CQCC68
封裝： WINDOWED, LDCC-68
文件頁數(shù)： 12/34頁
文件大?。?/td> 415K
代理商： HPC167064EL20
Absolute Maximum Ratings
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Total Allowable Source or Sink Current
100 mA
Storage Temperature Range
b
65 Cto a150 C
Lead Temperature (Soldering 10 sec)
300 C
VCC with Respect to GND
b
05V to 70V
All Other Pins
(VCC a 05V) to (GND b 05V)
Note
Absolute maximum ratings indicate limits beyond
which damage to the device may occur DC and AC electri-
cal specifications are not ensured when operating the de-
vice at absolute maximum ratings
DC Electrical Characteristics
VCC e 50V g5% unless otherwise specified TA eb55 Cto a125 C for HPC167064 and VCC e 50V g 10% unless
otherwise specified TA e 0 Cto70 C for HPC467064
Symbol
Parameter
Test Conditions
Min
Max
Units
ICC1
Supply Current
VCC e max fIN e 300 MHz (Note 1)
85
mA
VCC e max fIN e 200 MHz (Note 1)
70
mA
VCC e max fIN e 20 MHz (Note 1)
40
mA
ICC2
IDLE Mode Current
VCC e max fIN e 300 MHz (Note 1)
60
mA
VCC e max fIN e 200 MHz (Note 1)
45
mA
VCC e max fIN e 20 MHz (Note 1)
1
mA
ICC3
HALT Mode Current
VCC e max fIN e 0 kHz (Note 1)
400
m
A
VCC e 25V fIN e 0 kHz (Note 1)
100
m
A
INPUT VOLTAGE LEVELS FOR SCHMITT TRIGGERED INPUTS RESET NMI AND WO AND ALSO CKI
VIH1
Logic High
09 VCC
V
VIL1
Logic Low
01 VCC
V
ALL OTHER INPUTS
VIH2
Logic High
07 VCC
V
VIL2
Logic Low
02 VCC
V
ILI1
Input Leakage Current
VIN e 0 and VIN e VCC (Note 4)
g
2
m
A
ILI2
Input Leakage Current RDYHLD EXUI
VIN e 0
b
3
b
50
m
A
ILI3
Input Leakage Current B12
RESET e 0 VIN e VCC
05
7
m
A
ILI4
Input Leakage Current EXM
VIN e 0 and VIN e VCC (Note 4)
g
10
m
A
CI
Input Capacitance
(Note 2)
10
pF
CIO
IO Capacitance
(Note 2)
20
pF
OUTPUT VOLTAGE LEVELS
VOH1
Logic High (CMOS)
IOH eb10 mA (Note 2)
VCC b 01
01
V
VOL1
Logic Low (CMOS)
IOH e 10 mA (Note 2)
VOH2
Port AB Drive CK2
IOH eb7 mA
24
04
V
VOL2
(A0 – A15 B10 B11 B12 B15)
IOL e 3mA
VOH3
Other Port Pin Drive WO (open drain)
IOH eb16 mA (except WO)
24
04
V
VOL3
(B0 – B9 B13 B14 P0 – P3)
IOL e 05 mA
VOH4
ST1 and ST2 Drive
IOH eb6 mA
24
04
V
VOL4
IOL e 16 mA
VOH5
Port AB Drive (A0 – 15 B10 B11 B12 B15)
IOH eb1 mA
24
04
V
VOL5
when used as External AddressData Bus
IOL e 3mA
VRAM
RAM Keep-Alive Voltage
(Note 3)
25
VCC
V
IOZ
TRI-STATE Leakage Current
VIN e 0 and VIN e VCC
g
5
m
A
Note 1
ICC1 ICC2 ICC3 measured with no external drive (IOH and IOL e 0 IIH IIL e 0 and EXM e VCC) ICC1 is measured with RESET e GND ICC3 is measured
with NMI e VCC CKI driven to VIH1 and VIL1 with rise and fall times less than 10 ns
Note 2
This is guaranteed by design and not tested
Note 3
Test duration is 100 ms
Note 4
The EPROM mode of operation for this device requires high voltage input on pins EXMVPP I3 I4 I5 I6 and I7 This will increase the input leakage current
above the normal specification when driven to voltages greater than VCC a03V
See NORMAL RUNNING MODE
2
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