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參數(shù)資料
| 型號： | HN29WB800 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| 中文描述： | 1048576字× 8位/ 524288字× 16位CMOS閃存 |
| 文件頁數(shù)： | 21/37頁 |
| 文件大?。?/td> | 170K |
| 代理商： | HN29WB800 |
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HN29WT800 Series, HN29WB800 Series
21
Command Write Operation
HN29WT800/HN29WB800
-8
-10
-12
Parameter
Symbol Min
Typ
Max
Min
Typ
Max Min
Typ
Max
Unit
Write cycle time
t
WC
t
AS
t
AH
t
DS
t
DH
t
CS
t
CH
t
WP
t
WPH
t
WS
t
WH
t
CEP
t
CEPH
t
DAP
t
DAE
t
BS
t
BH
t
PS
t
BLS
80
—
—
100
—
—
120
—
—
ns
Address setup time
50
—
—
50
—
—
50
—
—
ns
Address hold time
10
—
—
10
—
—
10
—
—
ns
Data setup time
50
—
—
50
—
—
50
—
—
ns
Data hold time
CE
setup time
CE
hold time
10
—
—
10
—
—
10
—
—
ns
0
—
—
0
—
—
0
—
—
ns
0
—
—
0
—
—
0
—
—
ns
Write pulse width
60
—
—
60
—
—
60
—
—
ns
Write pulse high time
WE
setup time
WE
hold time
CE
pulse width
CE
pulse high time
20
—
—
20
—
—
20
—
—
ns
0
—
—
0
—
—
0
—
—
ns
0
—
—
0
—
—
0
—
—
ns
60
—
—
60
—
—
60
—
—
ns
20
—
—
20
—
—
20
—
—
ns
Duration of program operation
—
25
80
—
25
80
—
25
80
ms
Duration of block erase operation
BYTE
high or low setup time
BYTE
high or low hold time
RP
high recovery to
WE
low
—
50
600
—
50
600
—
50
600
ms
50
—
—
50
—
—
50
—
—
ns
80
—
—
100
—
—
120
—
—
ns
500
—
—
500
—
—
500
—
—
ns
Block lock setup to write enable
high
80
—
—
100
—
—
120
—
—
ns
t
WPS
t
BLH
t
WPH
t
WHRL
t
EHRL
80
—
—
100
—
—
120
—
—
ns
Block lock hold from valid SRD
0
—
—
0
—
—
0
—
—
ns
0
—
—
0
—
—
0
—
—
ns
WE
high to RDY/
Busy
low
CE
high to RDY/
Busy
low
Note:
Read operation parameters during command write operations mode are the same as during read timing
waveform. Typical values at V
CC
= 3.3 V, Ta = 25C.
—
—
80
—
—
100
—
—
120
ns
—
—
80
—
—
100
—
—
120
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN29WT800 | 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN462532 | 4096-word X 8-bit UV Erasable and Programmable Read Only Memory |
| HN462716 | 2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY |
| HN462716G | 2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY |
| HN462732 | 4096-WORD x 8-BIT UV ERASABLE AND PROGRAMMABLE READ ONLY MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN29WB800FP-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| HN29WB800FP-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| HN29WB800FP-8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| HN29WB800R-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN29WB800R-12 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
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