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參數(shù)資料
| 型號： | HN29WB800 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| 中文描述： | 1048576字× 8位/ 524288字× 16位CMOS閃存 |
| 文件頁數(shù)： | 12/37頁 |
| 文件大?。?/td> | 170K |
| 代理商： | HN29WB800 |
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HN29WT800 Series, HN29WB800 Series
12
Block Locking
RP
WP
Lock bit (internally) Write protection provided
V
IL
V
HH
V
IH
V
IH
V
IH
Note:
×
×
×
×
All blocks locked (Deep powerdown mode)
All blocks unlocked
V
IL
V
IL
V
IH
0
Blocks locked (Depend on lock bit data)
1
Blocks unlocked (Depend on lock bit data)
×
All blocks unlocked
I/O6 provided lock status of each block after writing the Read lock status command (71H).
WP
pin
must not be switched during performing Read/Write operations or WSM busy (WSMS = 0).
Status Register Data (SRD)
Symbol
Function
Definition
SR. 7 (I/O7)
Write state machine status 1 = Ready
0 = Busy
SR. 6 (I/O6)
Suspend status
1 = Suspend
0 = Operation in progress/completed
SR. 5 (I/O5)
Erase status
1 = Error
0 = Successful
SR. 4 (I/O4)
Program status
1 = Error
0 = Successful
SR. 3 (I/O3)
Block status after program 1 = Error
0 = Successful
SR. 2 (I/O2)
Reserved
The function and the definition for these bits are to be
determined. These bits should be masked out when the
status register is polled.
SR. 1 (I/O1)
Reserved
SR. 0 (I/O0)
Note:
Reserved
The RDY/
Busy
is an open dran output pin and indicates status of the internal WSM. When low, it
indicates that the WSM is Busy performing an operation. A pull-up resistor of 10k
to 100k
is
required to allow the RDY/
Busy
signal to transition high indicating a Ready WSM condition.
I/O3 indicates the block status after the page programming. When I/O3 is High, the page has the over-
programmed cell. If over-program occures, the device is block failed. However, if I/O3 is High, please
try the block erase to the block. The block may revive.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN29WT800 | 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN462532 | 4096-word X 8-bit UV Erasable and Programmable Read Only Memory |
| HN462716 | 2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY |
| HN462716G | 2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY |
| HN462732 | 4096-WORD x 8-BIT UV ERASABLE AND PROGRAMMABLE READ ONLY MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN29WB800FP-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| HN29WB800FP-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| HN29WB800FP-8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| HN29WB800R-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN29WB800R-12 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
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