參數(shù)資料
型號: HN29W6484AH03TE
廠商: Hitachi,Ltd.
英文描述: Controller for AND Flash Memory(AND型閃速存儲器控制器)
中文描述: 控制器及快閃記憶體(及型閃速存儲器控制器)
文件頁數(shù): 30/73頁
文件大?。?/td> 435K
代理商: HN29W6484AH03TE
HN29W6484AH03TE-1
30
Address Data 7
6 5 4 3 2 1 0
Description of contents
CIS function
0F0H
1BH CISTPL_CFTABLE_ENTRY
Configuration table entry
tuple
Tuple code
0F2H
06H TPL_LINK
Link length is 6 bytes
Link to next tuple
0F4H
02H I
D Configuration index
ATA primary I/O mapped
configuration
I = 0: No Interface byte
D = 0: No Default entry
Configuration index = 2
Configuration table index
byte
TPCE_INDX
0F6H
01H M
MS
IR IO T P
M = 0: No Misc info
MS = 00: No Memory space
info
IR = 0: No interrupt info
present
IO = 0: No I/O port info
present
T = 0: No timing info present
P = 1: V
CC
only info
Nominal voltage only follows
R: Reserved
DI: Power down current info
PI: Peak current info
AI: Average current info
SI: Static current info
HV: Max voltage info
LV: Min voltage info
NV: Nominal voltage info
Feature selection byte
TPCE_FS
0F8H
21H R
DI PI AI SI HV LV NV
Power parameters for V
CC
0FAH
B5H X
Mantissa
Exponent
Nominal voltage = 3.0 V
V
CC
nominal value
Extension byte
0FCH 1EH X
Extension
+0.3 V
0FEH
4DH X
Mantissa
Exponent
Max average current over 10
msec is 45 mA
Max. average current
相關PDF資料
PDF描述
HN29W6484DH08TE Controller for AND Flash Memory(AND型閃速存儲器控制器)
HN29WB800 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
HN29WT800 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
HN462532 4096-word X 8-bit UV Erasable and Programmable Read Only Memory
HN462716 2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY
相關代理商/技術(shù)參數(shù)
參數(shù)描述
HN29W6484AH03TE-1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY CONTROLLER
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HN29W8411SERIES 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AND Flash EEPROM
HN29WB800 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
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