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| 型號(hào)： | HN29W6484AH03TE |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Controller for AND Flash Memory(AND型閃速存儲(chǔ)器控制器) |
| 中文描述： | 控制器及快閃記憶體（及型閃速存儲(chǔ)器控制器） |
| 文件頁(yè)數(shù)： | 10/73頁(yè) |
| 文件大?。?/td> | 435K |
| 代理商： | HN29W6484AH03TE |
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HN29W6484AH03TE-1
10
Signal name
Direction Pin No.
Description
RESET
(PC Card Memory mode)
I
116
This signal is active high RESET pin. If this signal is
asserted high, the card internal initialization begins to
operate. During the card internal initialization
RDY/-BSY is low. After the card internal initialization
RDY/-BSY is high.
RESET
(PC Card I/O mode)
This signal is active high RESET pin. If this signal is
asserted high, the card internal initialization begins to
operate. In this mode, RDY/-BSY signal can not be
used, so using Status Register the Ready/Busy status
can be confirmed.
-RESET
(True IDE mode)
This signal is active low -RESET pin. If this signal is
asserted low, all the register’s in this card are reset.
In this mode, RDY/-BSY signal can not be used, so
using status register the Ready/Busy status can be
confirmed.
VCC
(PC Card Memory mode)
—
16, 25, 46, 59,
76, 87, 106
+5 V, +3.3 V power.
VCC
(PC Card I/O mode)
VCC
(True IDE mode)
-WAIT
(PC Card Memory mode)
O
117
This signal is active low -WAIT pin. In this card this
signal is constantly high level.
-WAIT
(PC Card I/O mode)
IORDY
(True IDE mode)
This output signal may be used as IORDY. In this
card this signal is constantly high impedance.
-WE
(PC Card Memory mode)
I
112
-WE is used for the control of writing register’s data in
attribute memory area or task file area.
-WE
(PC Card I/O mode)
-WE is used for the control of writing register’s data in
attribute memory area.
-WE
(True IDE mode)
This input signal is not used and should be connected
to VCC by the host.
WP
(PC Card Memory mode)
Write Protect
O
12
WP is held low because this card does not have write
protect switch.
-IOIS16
(PC Card I/O mode)
-IOIS16 is asserted when task file registers are
accessed in 16-bit mode.
-IOIS16
(True IDE mode)
This output signal is asserted low when this device is
expecting a word data transfer cycle. Initial mode is
16-bit. If the user issues a Set Feature Command to
put the device in Byte access mode, the card permits
8-bit accesses.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN29W6484DH08TE | Controller for AND Flash Memory(AND型閃速存儲(chǔ)器控制器) |
| HN29WB800 | 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN29WT800 | 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN462532 | 4096-word X 8-bit UV Erasable and Programmable Read Only Memory |
| HN462716 | 2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN29W6484AH03TE-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY CONTROLLER |
| HN29W64AH05TE-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY CONTROLLER |
| HN29W8411SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AND Flash EEPROM |
| HN29WB800 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN29WB800FP-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
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