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參數(shù)資料
| 型號： | HN29W25611T |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
| 中文描述： | 256M超過16057型快閃記憶體部門（271299072位） |
| 文件頁數(shù)： | 11/42頁 |
| 文件大?。?/td> | 331K |
| 代理商： | HN29W25611T |
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HN29W25611T-50H
11
Program (4):
Program data PD0 to PD2111 is programmed into the sector of address SA automatically by
internal control circuits. When CA is input, program data PD (m) to PD (m + j) is programmed from CA into
the sector of address SA automatically by internal control circuits. By using program (4), data can be
rewritten for each sector before the following erase. So the column data before programming operation are
either "1" or "0". In this mode, E/W number of times must be counted whenever program (4) execute. After
the programming starts, the program completion can be checked through the RDY/
Busy
signal and status data
polling. The sector valid data should be included in the program data PD2048 to PD2111.
Memory array
16383
Sector
address
0
0
2111
Register
Serial read (1) (Without CA)
Program (1) (Without CA)
Program (2)
16383
Sector
address
0
0
2111
Register
Serial read (2)
Program (3)
2048
Memory array
16383
Sector
address
0
0
2111
Register
Serial read (1) (With CA)
Program (1) (With CA)
Column address
Memory array
Status Register Read
The status returns to the status register read mode from standby mode, when
CE
and
OE
is V
IL
. In the status
register read mode, I/O pins output the same operation status as in the status data polling defined in the
function description.
Identifier Read
The manufacturer and device identifier code can be read in the identifier read mode. The manufacturer and
device identifier code is selected with
CDE
V
IL
and V
IH
, respectively.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN29W25611T-50H | 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
| HN29W25611 | 256M AND type Flash Memory(256M AND型閃速存儲器) |
| HN29W256AH03TE | Controller for AND Flash Memory(AND型閃速存儲器控制器) |
| HN29W256H02TE | Controller for AND Flash Memory(AND型閃速存儲器控制器) |
| HN29W6411A | 64M AND type Flash Memory(64M AND型閃速存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN29W25611T-50 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
| HN29W25611T-50H | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
| HN29W256H02TE-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY CONTROLLER |
| HN29W256SH02TE-1 | 制造商:Renesas Electronics Corporation 功能描述:256M FLASH CONTROLLER - Trays |
| HN29W3221T-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AND Flash EEPROM |
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