參數(shù)資料
型號(hào): HN29W25611T-50H
廠商: Hitachi,Ltd.
英文描述: 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
中文描述: 256M超過16057型快閃記憶體部門(271299072位)
文件頁(yè)數(shù): 1/42頁(yè)
文件大小: 331K
代理商: HN29W25611T-50H
HN29W25611T-50H
256M AND type Flash Memory
More than 16,057-sector (271,299,072-bit)
ADE-203-1178A (Z)
Rev. 1.0
May. 10, 2000
Description
The Hitachi HN29W25611T is a CMOS Flash Memory with AND type multi-level memory cells. It has fully
automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled
by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small
as (2048 + 64) bytes. Initial available sectors of HN29W25611T are more than 16,057 (98% of all sector
address) and less than 16,384 sectors.
Features
On-board single power supply (V
CC
): V
CC
= 3.3 V
±
0.3 V
Organization
AND Flash Memory: (2048 + 64) bytes
×
(More than 16,057 sectors)
Data register: (2048 + 64) bytes
Multi-level memory cell
2 bit/per memory cell
Automatic programming
Sector program time: 3.0 ms (typ)
System bus free
Address, data latch function
Internal automatic program verify function
Status data polling function
Automatic erase
Single sector erase time: 1.5 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function
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