參數(shù)資料
型號: HN29W25611T-50H
廠商: Hitachi,Ltd.
英文描述: 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
中文描述: 256M超過16057型快閃記憶體部門(271299072位)
文件頁數(shù): 20/42頁
文件大小: 331K
代理商: HN29W25611T-50H
HN29W25611T-50H
20
Parameter
SC setup for
WE
CE
hold time for
OE
Symbol
Min
Typ
Max
Unit
Test conditions
Notes
t
SW
t
COH
t
SCD
t
RS
t
DBR
50
ns
0
ns
SA (2) to CA (2) delay time
RDY/
Busy
setup for SC
30
μ
s
200
ns
Time to device busy on read
mode
1
μ
s
Busy time on reset mode
Notes: 1. t
DF
is a time after which the I/O pins become open.
2. t
(min) is specified as a reference point only for SC, if t
WSD
is greater than the specified t
WSD
(min)
limit, then access time is controlled exclusively by t
SAC
.
t
RBSY
45
μ
s
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