參數(shù)資料
型號: HN29W12811T-60
廠商: Hitachi,Ltd.
英文描述: 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)
中文描述: 128M的超過8029型快閃記憶體部門(135657984位)
文件頁數(shù): 23/42頁
文件大小: 315K
代理商: HN29W12811T-60
HN29W12811 Series
23
Timing Waveforms
Power on and off Sequence
t
VRS
t
RP
t
CES
t
BSY
t
CEH
t
CESR
t
RP
t
BSY
t
CES
t
CEH
t
VRH
t
DFP
t
CWRH
t
CESR
t
CWRS
V
CC
CE
WE
RES
RDY
/
Busy
*
1
*
2
*
1
High-Z
Ready
Notes: 1.
RES
must be kept at the V
ILR
level referred to DC characteristics at the rising and falling edges of V
CC
to guarantee data stored in the chip.
2.
RES
must be kept at the V
IHR
level referred to DC characteristics while I/O7 outputs the V
OL
level in the
status data polling and RDY/
Busy
outputs the V
OL
level.
3. : Undefined
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