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參數(shù)資料
| 型號： | HN29W12811 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit) |
| 中文描述： | 128M的超過8029型快閃記憶體部門（135657984位） |
| 文件頁數(shù)： | 31/42頁 |
| 文件大小： | 315K |
| 代理商： | HN29W12811 |
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HN29W12811 Series
31
Program (4) with CA before SC and Status Data Polling Timing Waveform
CE
SC
I/O0 to I/O7
RES
RDY
/
Busy
OE
WE
CDE
Notes: 1. The programming operation is not guaranteed when the number of the SC pulse exceeds (2112 – n).(i
≤
2111 – n, 0
≤
n
≤
2111)
2. The programming operation is not guaranteed when the number of the SC pulse exceeds (2112 – m).(j
≤
2111 – m, 0
≤
m
≤
2111)
3. Any commands, including reset command FFH, cannot be input while RDY/
is V
OL
.
4. The status returns to the standby status after RDY/
returns to High-Z.
5. By using program (4), data can be rewritten for each sector.
6. This interval can be repeated (h – 1) cycle.(1
≤
h
≤
2048 + 64)
t
CES
t
WP
t
CDS
t
CDS
t
CDH
t
CDH
t
WSD
t
CDSS
t
CDH
t
CDSH
t
AS
t
AS
t
SDS
t
DS
t
DB
t
SCC
SPL
t
AH
t
AH
t
SDH
t
DH
t
DF
t
DF
t
CDS
t
SW
t
CDSS
t
DS
t
AS
t
AS
t
AS
t
AS
t
SDS
t
DH
t
AH
t
AH
t
AH
t
AH
t
SCS
t
WP
t
RP
t
DBR
t
RBSY
t
RS
t
WP
t
WP
t
WP
t
WP
t
WP
t
WP
t
CEH
t
CE
t
CDH
t
SCHW
t
OEPS
t
RDY
t
OE
t
SW
t
CDS
t
WPH
t
CWC
t
OEWS
t
CWC
t
WPH
t
CWC
t
WPH
t
CWC
t
WPH
t
CWC
t
WPH
High-Z
High-Z*
4
11H
SA(1)
CA(1)
CA(2)
CA(1)'
CA(2)'
PD(n+1)PD(n+i)*
1
*
1
*
2
*
3
PD(m) PD(m+1)PD(m+j)*
2
h–1 cycle*
6
I/O7=V
OL
I/O7=V
OH
t
SDH
t
SPL
t
SP
t
SP
t
SP
t
SP
t
SCC
40H
SA(2)
PD(n)
t
ASP
Program (4) with CA after SC and Status Data Polling Timing Waveform
CE
SC
I/O0 to I/O7
RES
RDY
/
Busy
OE
WE
CDE
Notes: 1. The programming operation is not guaranteed when the number of the SC pulse exceeds 2112.(0
≤
k
≤
2111)
2. The programming operation is not guaranteed when the number of the SC pulse exceeds (2112 – m).(j
≤
2111 – m, 0
≤
m
≤
2111)
3. Any commands, including reset command FFH, cannot be input while RDY/
Busy
is V
OL
.
4. The status returns to the standby status after RDY/
Busy
returns to High-Z.
5. By using program (4), data can be rewritten for each sector.
6. This interval can be repeated h cycle.(1
≤
h
≤
2048 + 64)
t
CES
t
WP
t
CDS
t
CDS
t
CDH
t
CDH
t
WSD
t
CDSS
t
CDH
t
CDSH
t
AS
t
AS
t
SDS
t
DS
t
DB
t
SCC
SPL
t
AH
t
AH
t
SDH
t
DH
t
DF
t
DF
t
CDS
t
SW
t
CDSS
t
DS
t
AS
t
AS
t
SDS
t
DH
t
AH
t
AH
t
SDH
t
SCS
t
WP
t
RP
t
DBR
t
RS
t
RBSY
t
WP
t
WP
t
WP
t
WP
t
CEH
t
CE
t
CDH
t
SCHW
t
OEPS
t
RDY
t
OE
t
SW
t
CDS
t
WPH
t
CWC
t
OEWS
t
CWC
t
WPH
t
CWC
t
WPH
High-Z
High-Z*
4
11H
SA(1)
PD1
CA(1)
CA(2)
PD(k)*
1
*
1
*
2
*
3
PD(m) PD(m+1)PD(m+j)*
2
h cycle*
6
I/O7=V
OL
I/O7=V
OH
t
SPL
t
SP
t
SP
t
SP
t
SP
t
SCC
40H
SA(2)
PD0
t
ASP
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相關(guān)代理商/技術(shù)參數(shù) |
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| HN29W12811BP-60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|AND FLASH|16896KX8|CMOS|BGA|72PIN|PLASTIC |
| HN29W12811T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash Application Design Guidelines Others |
| HN29W12811T-60 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M AND type Flash Memory More than 8,029-sector (135,657,984-bit) |
| HN29W12814ASERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AND Flash EEPROM |
| HN29W12814ATT-50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|AND FLASH|2X8448KX8|CMOS|TSOP|48PIN|PLASTIC |
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