參數(shù)資料
型號: HN29W12811
廠商: Hitachi,Ltd.
英文描述: 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)
中文描述: 128M的超過8029型快閃記憶體部門(135657984位)
文件頁數(shù): 22/42頁
文件大?。?/td> 315K
代理商: HN29W12811
HN29W12811 Series
22
HN29W12811
-60
Parameter
SC setup for
CE
SC hold time for
WE
CE
to output delay
OE
to output delay
OE
high to output float
RES
to
CE
setup time
CDE
setup time for
WE
CDE
hold time for
WE
CDE
setup time for SC
CDE
hold time for SC
Symbol
Min
Typ
Max
Unit
Test conditions
Note
t
SCS
t
SCHW
t
CE
t
OE
t
DF
t
RP
t
CDS
t
CDH
t
CDSS
t
CDSH
t
RDY
t
CDOH
t
CDAC
t
CDF
t
COS
t
COH
t
CDOS
t
OES
t
OEL
t
SAC
t
SH
t
RS
t
CWH
t
CWHR
0
ns
20
ns
120
ns
60
ns
40
ns
1
1
ms
0
ns
20
ns
1.5
μ
s
30
ns
Next cycle ready time
CDE
to
OE
hold time
CDE
to output delay
CDE
to output invalid
CE
setup time for
OE
CE
hold time for
OE
CDE
to
OE
setup time
OE
setup time for SC
OE
low to output low-Z
0
ns
50
ns
50
ns
100
ns
0
ns
0
ns
20
ns
0
ns
0
40
ns
SC to output delay
60
ns
SC to output hold
RDY/
Busy
setup for SC
CE
hold time for
WE
CE
hold time for
WE
on recovery
read mode
WE
hold time for
WE
15
ns
200
ns
1.0
μ
s
μ
s
2
t
WWH
t
RBSY
1
μ
s
μ
s
Busy time on read mode
Note:
1. t
DF
is a time after which the I/O pins become open.
45
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