參數(shù)資料
型號(hào)： HN29V51211
廠商： Hitachi,Ltd.
英文描述： 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)
中文描述： 512M超過(guò)32113型快閃記憶體部門（542581248位）
文件頁(yè)數(shù)： 28/42頁(yè)
文件大小： 306K
代理商： HN29V51211
HN29V51211 Series
28
Program (1) with CA before SC and Status Data Polling Timing Waveform
CE
SC
I/O0 to I/O7
RES
/
Busy
OE
WE
CDE
Notes: 1. The programming operation is not guaranteed when the number of the SC pulse exceeds (2112 – n).(i
≤
2111 – n, 0
≤
n
≤
2111)
2. The programming operation is not guaranteed when the number of the SC pulse exceeds (2112 – m).(j
≤
2111 – m, 0
≤
m
2111)
3. Any commands, including reset command FFH, cannot be input while RDY/
is V
OL
.
4. The status returns to the standby status after RDY/
Busy
returns to High-Z.
5. By using program (1), data can be programmed additionally for each sector before erase.
6. This interval can be repeated (h – 1) cycle.(1
≤
h
≤
2048 + 64)
t
CES
t
WP
t
CDS
t
CDS
t
CDH
t
CDH
t
CDSS
t
CDH
t
CDSH
t
AS
t
AS
t
SDS
t
DS
t
DB
t
SCC
SPL
t
AH
t
AH
t
SDH
t
DH
t
DF
t
DF
t
CDS
t
SW
t
CDSS
t
DS
t
AS
t
AS
t
AS
t
AS
t
SDS
t
DH
t
AH
t
AH
t
AH
t
AH
t
SCS
t
WP
t
RP
t
WP
t
WP
t
WP
t
WP
t
WP
t
WP
t
CEH
t
CE
t
CDH
t
SCHW
t
OEPS
t
RDY
t
OE
t
SW
t
CDS
t
WPH
t
CWC
t
OEWS
t
CWC
t
WPH
t
CWC
t
WPH
t
CWC
t
WPH
t
CWC
t
WPH
High-Z
High-Z*
4
10H
SA(1)
SA(2)
CA(1)
CA(2)
CA(1)'
CA(2)'
PD(n) PD(n+1)PD(n+i)*
1
*
1
*
2
*
3
PD(m) PD(m+1)PD(m+j)*
2
h–1 cycle*
6
I/O7=V
OL
I/O7=V
OH
t
SDH
t
SPL
t
SP
t
SP
t
SP
t
SP
t
SCC
40H
t
ASP
Program (1) with CA after SC and Status Data Polling Timing Waveform
CE
SC
I/O0 to I/O7
RES
/
Busy
OE
WE
CDE
Notes: 1. The programming operation is not guaranteed when the number of the SC pulse exceeds 2112.(0
≤
k
≤
2111)
2. The programming operation is not guaranteed when the number of the SC pulse exceeds (2112 – m).(j
≤
2111 – m, 0
≤
m
≤
2111)
3. Any commands, including reset command FFH, cannot be input while RDY/
is V
OL
.
4. The status returns to the standby status after RDY/
returns to High-Z.
5. By using program (1), data can be programmed additionally for each sector before erase.
6. This interval can be repeated h cycle.(1
≤
h
≤
2048 + 64)
t
CES
t
WP
t
CDS
t
CDS
t
CDH
t
CDH
t
CDSS
t
CDH
t
CDSH
t
AS
t
AS
t
SDS
t
DS
t
DB
t
SCC
SPL
t
AH
t
AH
t
SDH
t
DH
t
DF
t
DF
t
CDS
t
SW
t
CDSS
t
DS
t
AS
t
AS
t
SDS
t
DH
t
AH
t
AH
t
SDH
t
SCS
t
WP
t
RP
t
WP
t
WP
t
WP
t
WP
t
CEH
t
CE
t
CDH
t
SCHW
t
OEPS
t
RDY
t
OE
t
SW
t
CDS
t
WPH
t
CWC
t
OEWS
t
CWC
t
WPH
t
CWC
t
WPH
High-Z
High-Z*
4
10H
SA(1)
SA(2)
PD0
PD1
CA(1)
CA(2)
PD(k)*
1
*
1
*
2
*
3
PD(m) PD(m+1)PD(m+j)*
2
h cycle*
6
I/O7=V
OL
I/O7=V
OH
t
SPL
t
SP
t
SP
t
SP
t
SP
t
SCC
40H
t
ASP
相關(guān)PDF資料
PDF描述
HN29V51211T-50 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HN29V51211T-50 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)
HN29V51211T-50H 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash Application Design Guidelines Others
HN29VB800R-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
HN29VB800R-12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
HN29VB800SERIES 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
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