參數(shù)資料
型號: HN29V51211
廠商: Hitachi,Ltd.
英文描述: 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)
中文描述: 512M超過32113型快閃記憶體部門(542581248位)
文件頁數(shù): 13/42頁
文件大?。?/td> 306K
代理商: HN29V51211
HN29V51211 Series
13
Data Recovery Read
When the programming was an error, the program data can be read by using data recovery read. When an
additional programming was an error, the data compounded of the program data and the origin data in the
sector address SA can be read. Output data are not valid after the number of SA pulse exeeds 2112. The
mode turns back to the standby mode at any time when
CE
is V
IH
. The read data are invalid when addresses
are latched at a rising edge of
WE
pulse after the data recovery read command is written.
Data Recovery Write
When the programming into a sector of address SA was an error, the program data can be rewritten
automatically by internal control circuit into the other selected sector of address SA’. Since the data recovery
write mode is internally Program (4) mode, rewritten sector of address SA’ needs no sector erase before
rewrite. After the data recovery write mode starts, the program completion can be checked through the
RDY/
Busy
signal and the status data polling.
相關PDF資料
PDF描述
HN29V51211T-50 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)
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相關代理商/技術參數(shù)
參數(shù)描述
HN29V51211T-50 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)
HN29V51211T-50H 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash Application Design Guidelines Others
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