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參數(shù)資料
| 型號： | HMMC-5025 |
| 元件分類： | 放大器 |
| 英文描述： | 2000 MHz - 50000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.0677 X 0.0362 INCH, DIE |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 111K |
| 代理商： | HMMC-5025 |
2
HMMC-5025 DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
I
DSS
Saturated Drain Current
mA
130
150
170
(V
DD = 5.0 V, VG1 = 0 V, VG2 = open circuit)
Vp
First Gate Pinch-off Voltage
V
-1.7
-0.5
(V
DD = 5.0 V, IDD = 15 mA, VG2 = open circuit)
V
G2
Second Gate Self-Bias Voltage
V
2
(V
DD = 5.0 V, IDD = 75 mA)
I
DSOFF(VG1)
First Gate Pinch-off Current
mA
6
10
(V
DD = 5.0 V, VG1 = -3.5 V, VG2 = open circuit)
I
DSOFF(VG2)
Second Gate Pinch-off Current
mA
10
(V
DD = 5.0 V, IDD = 75 mA, VG2 = -2.5 V)
θ
ch-bs
Thermal Resistance (Tbackside = 25°C)
°C/W
63
Note:
1. Measured in wafer form with T
chuck = 25°C. (Except θch-bs.)
Electrical Specifications[1], V
DD = 5.0 V, IDD(Q) = 75 mA, Z
in = Zo = 50
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
BW
Guaranteed Bandwidth
[2]
GHz
2
50
S21
Small Signal Gain
dB
7.0
8.5
S
21
Small Signal Gain Flatness
dB
±0.75
±1.5
RLin
Input Return Loss
dB
10
15
RL
out
Output Return Loss
dB
10
15
S
12
Reverse Isolation
dB
20
30
P-1dB
Output Power @ 1dB Gain Compression @ 40 GHz
dBm
12
Psat
Saturated Output Power @ 40 GHz
dBm
16
H2
Second Harmonic Power Level (2 < o <26)
dBc
-35
Po(o) = 10 dBm
H3
Third Harmonic Power Level (2 < o <20)
dBc
-25
Po(o) = 10 dBm
NF
Noise Figure (2 – 35 GHz)
dB
5.0
Noise Figure (35 – 50 GHz)
7.0
Notes:
1. Small-signal data measured in wafer form with T
chuck = 25°C. Harmonic data measured on individual devices mounted in a microcircuit package at TA = 25°C.
2. Performance may be extended to lower frequencies through the use of appropriate off-chip circuitry.
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