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參數(shù)資料
| 型號： | HMMC-5023 |
| 元件分類： | 放大器 |
| 英文描述： | 21200 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.074 X 0.0236 INCH, DIE |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 102K |
| 代理商： | HMMC-5023 |
2
DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
V
D1, VD2
Recommended Drain Supply Voltage
V
3
5
7
V
G1, VG2
Gate Supply Voltage (V
D1 ≤ VD1(max), VD2 ≤ VD2(max))
V
0.4
0.8[2]
2
ID1, ID2
Input and Output Stage Drain Supply Current (VG1 = VG2 = Open, VD1 = VD2 = 5 Volts)
mA
12
35
ID1+ID2
Total Drain Supply Current (VG1 = VG2 = Open, VD1 = VD2 = 5 Volts)
mA
13
24
30
θ
ch-bs
Thermal Resistance[3] (Channel-to-Backside at Tch = 150°C)
°C/W
75
T
ch
Channel Temperature[4] (T
A = 140°C, MTTF = 10
6 hrs, V
G1 = VG2 = Open, VD1 = VD = 5 Volts)
°C
150
Notes:
1. Backside ambient operating temperature TA = 25°C unless otherwise noted.
2. Open circut voltage at V
G1 and VG2 when VD1 and VD2 are 5 Volts.
3. Thermal resistance (in
°C/Watt) at a channel temperature T(°C) can be estimated using the equation:
θ(T) 75 x [T(°C) + 273]/[150°C + 273].
4. Derate MTTF by a factor of two for every 8
°C above T
ch.
HMMC-5023 RF Specifications, (Top = 25°C, VD1 = VD2 = 5V, VG1 = VG2 = Open, Z0 = 50, unless otherwise noted)
21.2– 23.6 GHz
24.5– 26.5 GHz
Symbol
Parameters/Conditions
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
BW
Operating Bandwidth
GHz
21.2
23.6
24.5
26.5
Gain
Small Signal Gain
dB
21
24
28
17
21
25
Gain
Small Signal Gain Flatness
dB
±1
±1.5
RLin(min)
Minimum Input Return Loss
dB
10
12
20
RL
out(min)
Minimum Output Return Loss
dB
8
10
8
10
Isolation
Reverse Isolation
dB
40
50
40
48
P-1dB
Output Power @ 1 dB Gain Compression
dBm
10
Output Power @ 1 dB Gain Compression
dBm
14
(V
D = 5 V, VG1= Open, VD2 = 7 V,
V
G2 set for ID2 = 35 mA)
Psat
Saturated Output Power (@ 3 dB Gain Compression)
dBm
12
2nd Harm.
Second Harmonic Power Level [f = 2fo, Pout (fo) = P-1dB,
dBc
-30
21.2 GHz
≤ f
o ≤ 23.6 GHz]
NF
Noise Figure: 22 GHz
dB
2.5
3.0
Noise Figure: 25 GHz
2.8
3.3
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