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參數(shù)資料
| 型號： | HMC606 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 2000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 2.80 X 1.73 MM, 0.10 MM HEIGHT, PLASTIC, DIE-4 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 317K |
| 代理商： | HMC606 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC606
v02.0109
General Description
Features
Functional Diagram
The HMC606 is a GaAs InGaP HBT MMIC Distributed
Amplifier die which operates between 2 and 18 GHz.
With an input signal of 12 GHz, the amplifier provides
ultra low phase noise performance of -160 dBc/Hz at
10 kHz offset, representing a significant improvement
over FET-based distributed amplifiers. The HMC606
provides 14 dB of small signal gain, +27 dBm output
IP3 and +15 dBm of output power at 1 dB gain com-
pression while requiring 64 mA from a +5V supply.
The HMC606 amplifier I/Os are internally matched to
50 Ohms facilitating easy integration into Multi-Chip-
Modules (MCMs). All data is taken with the chip in a 50
Ohm test fixture connected via 0.025 mm (1mil) diam-
eter wire bonds of minimal length 0.31 mm (12 mils).
Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz
P1dB Output Power: +15 dBm
Gain: 14 dB
Output IP3: +27 dBm
Supply Voltage: +5V @ 64 mA
50 Ohm Matched Input/Output
Die Size: 2.80 x 1.73 x 0.1 mm
Typical Applications
The HMC606 is ideal for:
Radar, EW & ECM
Microwave Radio
Test Instrumentation
Military & Space
Fiber Optic Systems
Electrical Specifications, T
A = +25° C, Vcc1= Vcc2= 5V
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
2 - 12
12 - 18
GHz
Gain
11
14.0
10
13
dB
Gain Flatness
±1.0
dB
Gain Variation Over Temperature
0.021
0.25
dB/ °C
Noise Figure
4.5
6.5
dB
Input Return Loss
20
22
dB
Output Return Loss
15
dB
Output Power for 1 dB Compression (P1dB)
12
15
10
13
dBm
Saturated Output Power (Psat)
18
15
dBm
Output Third Order Intercept (IP3)
27
22
dBm
Phase Noise @ 100 Hz
-140
dBc/Hz
Phase Noise @ 1 kHz
-150
dBc/Hz
Phase Noise @ 10 kHz
-160
dBc/Hz
Phase Noise @ 1 MHz
-170
dBc/Hz
Supply Current
64
95
64
95
mA
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC606_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz |
| HMC606LC5 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz |
| HMC606LC5_08 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz |
| HMC606LC5TR | 制造商:Hittite Microwave Corp 功能描述:IC AMP LOW PHASE NOISE 32SMD |
| HMC606-SX | 功能描述:RF Amplifier IC Radar 2GHz ~ 18GHz Die 制造商:analog devices inc. 系列:- 包裝:托盤 零件狀態(tài):有效 頻率:2GHz ~ 18GHz P1dB:13dBm 增益:13dB 噪聲系數(shù):6.5dB RF 類型:雷達(dá) 電壓 - 電源:5V 電流 - 電源:64mA 測試頻率:12GHz ~ 18GHz 封裝/外殼:模具 供應(yīng)商器件封裝:模具 標(biāo)準(zhǔn)包裝:2 |
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