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參數(shù)資料
| 型號(hào)： | HMC637LP5 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 5 X 5 MM, PLASTIC, SMT, QFN-32 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 619K |
| 代理商： | HMC637LP5 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC637LP5 / 637LP5E
v02.0709
General Description
Features
Functional Diagram
Typical Applications
GaAs MESFET MMIC 1 WATT
POWER AMPLIFIER, DC - 6 GHz
The HmC637lp5(e) is a GaAs mmiC mesfeT
Distributed power Amplifier which operates bet-
ween DC and 6 GHz. The amplifier provides 13 dB
of gain, +40 dBm output ip3 and +29 dBm of output
power at 1 dB gain compression while requiring 400
mA from a +12V supply. Gain flatness is excellent at
±0.75 dB from DC - 6 GHz making the HmC637lp5(e)
ideal for ew, eCm, radar and test equipment
applications. The HmC637lp5(e) amplifier i/os
are internally matched to 50 ohms and the 5x5 mm
Qfn package is compatible with high volume smT
assembly equipment.
p1dB output power: +29 dBm
Gain: 13 dB
output ip3: +40 dBm
50 ohm matched input/output
32 lead 5x5mm lead smT package: 25mm2
The HmC637lp5(e) wideband pA is ideal for:
Telecom infrastructure
microwave radio & VsAT
military & space
Test instrumentation
fiber optics
Electrical Specifications, T
A = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 400 mA*
parameter
min.
Typ.
max.
Units
frequency range
DC - 6
GHz
Gain
12
13
dB
Gain flatness
±0.75
dB
Gain Variation over Temperature
0.025
dB/ °C
input return loss
12
dB
output return loss
15
dB
output power for 1 dB Compression (p1dB)
27
29
dBm
saturated output power (psat)
29.5
dBm
output Third order intercept (ip3)
40
dBm
noise figure
5
dB
supply Current (idd)
320
400
480
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 400 mA typical.
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