- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄67101 > HMC639ST89E (HITTITE MICROWAVE CORP) 200 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER PDF資料下載
參數(shù)資料
| 型號(hào)： | HMC639ST89E |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 200 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, PLASTIC, SOT-89, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 664K |
| 代理商： | HMC639ST89E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 1
A
M
P
LI
F
IE
R
S
-
L
IN
E
A
R
&
P
O
W
E
R
-
S
M
T
HMC639ST89 / 639ST89E
HIGH IP3, LOW NOISE
AMPLIFIER, 0.2 - 4.0 GHz
v03.0810
General Description
Features
Functional Diagram
The HMC639ST89(E) is a GaAs pHEMT, High
Linearity, Low Noise, Wideband Gain Block Amplifier
covering 0.2 to 4.0 GHz. Packaged in an industry
standard SOT89, the amplifier can be used as either
a cascadable 50 Ohm gain stage, a PA Pre-Driver,
a Low Noise Amplifier, or a Gain Block with up to
+22 dBm output power. This versatile Gain Block
Amplifier is powered from a single +5V supply and
requires no external matching components. The
internally matched topology permits this amplifier to
be readily ported between virtually any printed circuit
board material, regardless of its dielectric constant,
thickness, or composition.
Low Noise Figure: 2.3 dB
High P1dB Output Power: +22 dBm
High Output IP3: +38 dBm
Gain: 13 dB
50 Ohm I/O’s - No External Matching
Industry Standard SOT89 Package
Typical Applications
The HMC639ST89(E) is ideal for:
Cellular / PCS / 3G
WiMAX, WiBro, & Fixed Wireless
CATV & Cable Modem
Microwave Radio
IF and RF Sections
Electrical Specifications, Vs= 5V, T
A = +25° C
Parameter
Min
Typ.
Max
Min.
Typ.
Max.
Units
Frequency Range
0.7 - 2.2
0.2 - 4.0
GHz
Gain
10
13
6
10
dB
Gain Variation Over Temperature
0.01
0.02
0.01
0.02
dB/ °C
Input Return Loss
12
dB
Output Return Loss
12
14
dB
Reverse Isolation
20
dBm
Output Power for 1 dB Compression (P1dB)
19
21
20
22
dB
Output Third Order Intercept (IP3)
35
38
35
38
dBm
Noise Figure
2.3
2.5
dB
Supply Current (Icq)
90
110
120
90
110
120
mA
Note: Data taken with broadband bias tee on device output.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMC685LP4E | 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| HMC685LP4 | 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| HMC709LC5 | 11000 MHz - 17000 MHz RF/MICROWAVE UP CONVERTER |
| HMC719LP4E | 1300 MHz - 2900 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC719LP4 | 1300 MHz - 2900 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC639ST89ETR | 制造商:Hittite Microwave Corp 功能描述:IC AMP GBA LNA HI IP3 SOT-89 |
| HMC641 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 18 GHz |
| HMC641A | 功能描述:IC SW SP4T NON-REFL DIE 制造商:analog devices inc. 系列:* 零件狀態(tài):有效 標(biāo)準(zhǔn)包裝:25 |
| HMC641ALC4 | 功能描述:RF Switch IC VSAT SP4T 20GHz 50 Ohm 24-SMT (4x4) 制造商:analog devices inc. 系列:- 包裝:剪帶 零件狀態(tài):有效 頻率?- 下:0Hz 頻率?- 上:20GHz 隔離 @ 頻率:40dB @ 20GHz（標(biāo)準(zhǔn)） 插損 @ 頻率:2.3dB @ 20GHz IIP3:41dBm（標(biāo)準(zhǔn)） 拓?fù)?吸收性 電路:SP4T P1dB:25dBm 特性:- 阻抗:50 歐姆 工作溫度:-40°C ~ 85°C 電壓 - 電源:- RF 類型:VSAT 封裝/外殼:24-TFQFN 裸露焊盤 供應(yīng)商器件封裝:24-SMT（4x4） 標(biāo)準(zhǔn)包裝:1 |
| HMC641ALC4TR | 功能描述:RF Switch IC VSAT SP4T 20GHz 50 Ohm 24-SMT (4x4) 制造商:analog devices inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 頻率?- 下:0Hz 頻率?- 上:20GHz 隔離 @ 頻率:40dB @ 20GHz（標(biāo)準(zhǔn)） 插損 @ 頻率:2.3dB @ 20GHz IIP3:41dBm（標(biāo)準(zhǔn)） 拓?fù)?吸收性 電路:SP4T P1dB:25dBm 特性:- 阻抗:50 歐姆 工作溫度:-40°C ~ 85°C 電壓 - 電源:- RF 類型:VSAT 封裝/外殼:24-TFQFN 裸露焊盤 供應(yīng)商器件封裝:24-SMT（4x4） 標(biāo)準(zhǔn)包裝:1 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。