參數(shù)資料
型號(hào): HMC455LP3
廠商: 美國(guó)訊泰微波有限公司上海代表處
元件分類: FPGA
英文描述: 800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
中文描述: 的InGaP HBT的1 / 2瓦特高IP3放大器,一月7日至2月5日吉赫
文件頁(yè)數(shù): 5/8頁(yè)
文件大小: 313K
代理商: HMC455LP3
MICROWAVE CORPORATION
8 - 268
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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HMC455LP3
GaAs InGaP HBT Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
v01.0604
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB
LAND PATTERN.
Collector Bias Voltage (Vcc)
+6.0 Vdc
RF Input Power (RFin)(Vs = +5.0 Vdc)
+30 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 16 mW/°C above 85 °C)
1.04 W
Thermal Resistance
(junction to ground paddle)
63 °C/W
Storage Temperature
Operating Temperature
-40 to +85 °C
Data shown is tuned for 1.85 - 2.2 GHz, contact HMC
Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits.
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