- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367212 > HMC455LP3 (美國訊泰微波有限公司上海代表處) 800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN PDF資料下載
參數(shù)資料
| 型號： | HMC455LP3 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 元件分類： | FPGA |
| 英文描述： | 800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 的InGaP HBT的1 / 2瓦特高IP3放大器，一月7日至2月5日吉赫 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 313K |
| 代理商： | HMC455LP3 |
MICROWAVE CORPORATION
8 - 264
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
8
HMC455LP3
InGaP HBT Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
v01.0604
General Description
Features
Functional Diagram
The HMC455LP3 is a high output IP3 GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
watt MMIC amplifier operating between 1.7
and 2.5 GHz. Utilizing a minimum number of
external components the amplifier provides 13
dB of gain and +28 dBm of saturated power at
56% PAE from a single +5 Vdc supply voltage.
The high output IP3 of +42 dBm coupled with
the low VSWR of 1.4:1 makes the HMC455LP3
an ideal driver amplifier for PCS/3G wireless
infrastructure. A low cost, leadless 3x3 mm QFN
surface mount package (LP3) houses the linear
amplifier. The LP3 provides an exposed base for
excellent RF and thermal performance.
Output IP3: +42 dBm
Gain: 13 dB
56% PAE @ +28 dBm Pout
+19 dBm W-CDMA Channel Power @ -45 dBc ACP
3 x 3 x 1 mm QFN SMT Package
Electrical Specifications,
T
A
= +25° C, Vs= +5V
Typical Applications
This amplifier is ideal for high linearity applications:
Multi-Carrier Systems
GSM, GPRS & EDGE
CDMA & WCDMA
PHS
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
1.7 - 1.9
1.9 - 2.2
2.2 - 2.5
GHz
Gain
11.5
13.5
10.5
13
9
11.5
dB
Gain Variation Over Temperature
0.012
0.02
0.012
0.02
0.012
0.02
dB / °C
Input Return Loss
13
15
10
dB
Output Return Loss
10
18
15
dB
Output Power for 1dB Compression (P1dB)
24
27
24.5
27.5
23
26
dBm
Saturated Output Power (Psat)
28.5
28
27
dBm
Output Third Order Intercept (IP3)
37
40
39
42
37
40
dBm
Noise Figure
7
6
6
dB
Supply Current (Icq)
150
150
150
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMC457QS16G | InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz |
| HMC459 | 800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC460LC5 | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz |
| HMC460 | 800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC461LP3 | InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC455LP3_06 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz |
| HMC455LP3_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT ? Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz |
| HMC455LP3E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP HBT HI IP3 16-QFN |
| HMC455LP3ETR | 功能描述:RF Amplifier IC General Purpose 1.7GHz ~ 2.5GHz 16-QFN (3x3) 制造商:analog devices inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 頻率:1.7GHz ~ 2.5GHz P1dB:27.5dBm 增益:13dB 噪聲系數(shù):6dB ~ 7db RF 類型:通用 電壓 - 電源:5V 電流 - 電源:150mA 測試頻率:- 封裝/外殼:16-VFQFN 裸露焊盤 供應(yīng)商器件封裝:16-QFN（3x3） 標準包裝:1 |
| HMC457QS16G | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。