參數(shù)資料
型號: HM621100A
廠商: Hitachi,Ltd.
英文描述: 1048576-word ×1-bit High Speed CMOS Static RAM(1048576字 ×1位高速CMOS SRAM)
中文描述: 1048576字× 1位高速CMOS靜態(tài)RAM(1048576字× 1位高速CMOS SRAM的)
文件頁數(shù): 5/16頁
文件大?。?/td> 94K
代理商: HM621100A
HM621100A Series
5
DC Characteristics
(Ta = 0 to +70
°
C, V
CC
= 5 V
±
10%, V
SS
= 0 V)
HM621100A-20
HM621100A-
25/35
Parameter
Symbol
Min
Typ
*1
Max
Min
Typ
*1
Max
Unit Test
Conditions
Input leakage current
|I
LI
|
2.0
2.0
μ
A
V
= max
Vin = V
SS
to V
CC
Output leakage current
|I
LO
|
2.0
2.0
μ
A
CS
= V
IH
V
I/O
= V
SS
to V
CC
Operating power supply
current
I
CC
150
120
mA
CS
= V
, I
I/O
= 0 mA,
min cycle
Standby power supply current
I
SB
60
40
mA
CS
= V
IH
, min cycle
Standby power supply current
(1)
I
SB1
*2
0.02
2.0
0.02
2.0
mA
CS
V
–0.2 V
0 V
Vin
0.2 V or
Vin
V
CC
–0.2 V
I
SB1
*3
100
100
μ
A
Output low voltage
V
OL
0.4
0.4
V
I
OL
= 8 mA
Output high voltage
Notes: 1. Typical values are at V
CC
= 5.0 V, Ta = +25
°
C and not guaranteed.
2. P and JP version
3. LP and LJP version
V
OH
2.4
2.4
V
I
OH
= –4 mA
Capacitance
(Ta = 25
°
C, f = 1 MHz)
Parameter
Symbol
Min
Max
Unit
Test
Conditions
Input capacitance
Cin
5
*2
pF
Vin = 0 V
6
*3
Output capacitance
Notes: 1. This parameter is sampled and not 100% tested.
2. SOJ package
3. DIP package
Cout
8
pF
Vout = 0 V
AC Characteristics
(Ta = 0 to +70
°
C, V
CC
= 5 V
±
10%, unless otherwise noted.)
Test
_
Input pulse levels: 0 V to 3.0 V
_
Input rise and fall time: 4 ns
_
Input timing reference levels: 1.5 V
_
Output timing reference levels: 1.5 V
_
Output load: See figures
Conditions
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