參數(shù)資料
型號(hào): HM5225805BTT-B6
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
中文描述: 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝: 0.400 INCH, PLASTIC, TSOP2-54
文件頁數(shù): 63/63頁
文件大小: 462K
代理商: HM5225805BTT-B6
HM5225165B/HM5225805B/HM5225405B-75/A6/B6
Data Sheet E0082H10
63
Cautions
1. Elpida Memory, Inc. neither warrants nor grants licenses of any rights of Elpida Memory, Inc.
s or any
third party
s patent, copyright, trademark, or other intellectual property rights for information contained in
this document. Elpida Memory, Inc. bears no responsibility for problems that may arise with third party
s
rights, including intellectual property rights, in connection with use of the information contained in this
document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, contact Elpida Memory, Inc. before using the product in an application that demands especially
high quality and reliability or where its failure or malfunction may directly threaten human life or cause
risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Elpida Memory, Inc.
particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage
when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally
foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as
fail-safes, so that the equipment incorporating Elpida Memory, Inc. product does not cause bodily injury,
fire or other consequential damage due to operation of the Elpida Memory, Inc. product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Elpida Memory, Inc..
7. Contact Elpida Memory, Inc. for any questions regarding this document or Elpida Memory, Inc.
semiconductor products.
相關(guān)PDF資料
PDF描述
HM5225805BLTT-B6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5225405BTT-B6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5225405BLTT-B6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5225805BTT-75 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5225405BTT-75 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
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