參數(shù)資料
型號: HM51W18165LJ-7
廠商: Hitachi,Ltd.
英文描述: 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh
中文描述: 16米EDO公司的DRAM(1 - Mword 16位)4畝刷新/ 1畝刷新
文件頁數(shù): 13/36頁
文件大?。?/td> 461K
代理商: HM51W18165LJ-7
HM51W16165 Series, HM51W18165 Series
13
Write Cycle
HM51W16165/HM51W18165
-5
-6
-7
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
Write command setup time
t
WCS
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
0
0
0
ns
14, 21
Write command hold time
8
10
13
ns
21
Write command pulse width
Write command to
RAS
lead time
Write command to
CAS
lead time
8
10
10
ns
8
10
13
ns
8
10
13
ns
23
Data-in setup time
0
0
0
ns
15, 23
Data-in hold time
8
10
13
ns
15, 23
Read-Modify-Write Cycle
HM51W16165/HM51W18165
-5
-6
-7
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
Read-modify-write cycle time
RAS
to
WE
delay time
CAS
to
WE
delay time
Column address to
WE
delay time
OE
hold time from
WE
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
111
135
161
ns
67
79
92
ns
14
30
34
40
ns
14
42
49
57
ns
14
13
15
18
ns
Refresh Cycle
HM51W16165/HM51W18165
-5
-6
-7
Parameter
CAS
setup time (CBR refresh cycle) t
CSR
CAS
hold time (CBR refresh cycle)
RAS
precharge to
CAS
hold time
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
5
5
5
ns
21
t
CHR
t
RPC
8
10
10
ns
22
5
5
5
ns
21
This Material Copyrighted By Its Respective Manufacturer
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