參數(shù)資料
型號: HM51W18165J-7
廠商: Hitachi,Ltd.
英文描述: 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh
中文描述: 16米EDO公司的DRAM(1 - Mword 16位)4畝刷新/ 1畝刷新
文件頁數(shù): 1/36頁
文件大小: 461K
代理商: HM51W18165J-7
HM51W16165 Series
HM51W18165 Series
16 M EDO DRAM (1-Mword
×
16-bit)
4 k Refresh/1 k Refresh
ADE-203-650D (Z)
Rev. 4.0
Nov. 1997
Description
The Hitachi HM51W16165 Series, HM51W18165 Series are CMOS dynamic RAMs organized as
1,048,576-word
×
16-bit. They employ the most advanced CMOS technology for high performance and
low power. HM51W16165 Series, HM51W18165 Series offer Extended Data Out (EDO) Page Mode as a
high speed access mode. They have package variations of standard 400-mil 42-pin plastic SOJ and 400-mil
50-pin plastic TSOP.
Features
Single 3.3 V (
±
0.3 V)
Access time: 50 ns/60 ns/70 ns (max)
Power dissipation
Active mode
: 684 mW /612 mW /540 mW (max) (HM51W18165 Series)
Standby mode : 7.2 mW (max)
: 0.54 mW (max) (L-version)
EDO page mode capability
Refresh cycles
4096 refresh cycles : 64 ms (HM51W16165 Series)
: 128 ms (L-version)
1024 refresh cycles : 16 ms (HM51W18165 Series)
: 128 ms (L-version)
4 variations of refresh
RAS
-only refresh
CAS
-before-
RAS
refresh
Hidden refresh
Self refresh (L-version)
2CAS-byte control
Battery backup operation (L-version)
: 396 mW/360mW/324 mW (max) (HM51W16165 Series)
This Material Copyrighted By Its Respective Manufacturer
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