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參數(shù)資料
| 型號： | HM5164165FLJ-5 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| 中文描述： | 6400 EDO公司的DRAM（4 Mword x 16位）8K的refresh/4k刷新 |
| 文件頁數(shù)： | 9/37頁 |
| 文件大?。?/td> | 510K |
| 代理商： | HM5164165FLJ-5 |
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HM5164165F Series, HM5165165F Series
9
DC Characteristics
(HM5164165F Series)
HM5164165F
-5
-6
Parameter
Symbol Min
Max
Min
Max
Unit
Test conditions
Operating current*
1,
*
2
I
CC1
I
CC2
—
120
—
110
mA
t
RC
= min
TTL interface
RAS
,
UCAS
,
LCAS
= V
IH
Dout = High-Z
Standby current
—
2
—
2
mA
—
0.5
—
0.5
mA
CMOS interface
RAS
,
UCAS
,
LCAS
≥
V
– 0.2 V
Dout = High-Z
Standby current
(L-version)
I
CC2
—
300
—
300
μ
A
CMOS interface
RAS
,
UCAS
,
LCAS
≥
V
– 0.2 V
Dout = High-Z
RAS
-only refresh current*
2
I
CC3
I
CC5
—
120
—
110
mA
t
RC
= min
RAS
= V
UCAS
,
LCAS
= V
IL
Dout = enable
Standby current*
1
—
5
—
5
mA
CAS
-before-
RAS
refresh
current
I
CC6
—
120
—
110
mA
t
RC
= min
EDO page mode current*
1,
*
3
I
CC7
—
120
—
110
mA
RAS
= V
IL
,
CAS
cycle,
t
HPC
= t
HPC
min
CMOS interface
Dout = High-Z
CBR refresh: t
RC
= 15.6
μ
s
t
RAS
≤
0.3
μ
s
CMOS interface
RAS
,
UCAS
,
LCAS
≤
0.2 V
Dout = High-Z
Battery backup current*
4
(Standby with CBR refresh)
(L-version)
I
CC10
—
1.2
—
1.2
mA
Self refresh mode current
(L-version)
I
CC11
—
500
—
500
μ
A
Input leakage current
I
LI
I
LO
–5
5
–5
5
μ
A
μ
A
0 V
≤
Vin
≤
V
CC
+ 0.3 V
0 V
≤
Vout
≤
V
CC
Dout = disable
Output leakage current
–5
5
–5
5
Output high voltage
V
OH
OL
2.4
V
CC
0.4
2.4
V
CC
0.4
V
High Iout = –2 mA
Output low voltage
Notes: 1. I
depends on output load condition when the device is selected. I
CC
max is specified at the output
open condition.
2. Address can be changed once or less while
RAS
= V
IL
.
3. Measured with one sequential address change per EDO cycle, t
HPC
.
4. V
IH
≥
V
CC
– 0.2 V, 0 V
≤
V
IL
≤
0.2 V.
0
0
V
Low Iout = 2 mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM5164165FLJ-6 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5164165FTT-5 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5165165FTT-5 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5164165FTT-6 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5165165FTT-6 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM5165165FTT-60 | 制造商:Hitachi 功能描述: |
| HM51680J | 制造商:TT Electronics / BI Technologies 功能描述:Ind Power Wirewound 68uH 5% 1KHz 3.3A AXL |
| HM51-680J | 制造商:BI Technologies (TT electronics) 功能描述:Ind Power Wirewound 68uH 5% 1KHz 3.3A AXL |
| HM51-680JLF | 制造商:BITECH 制造商全稱:Bi technologies 功能描述:Axially Leaded Miniature Power Inductors |
| HM51680K | 制造商:TT Electronics / BI Technologies 功能描述:Ind Power Wirewound 68uH 10% 1KHz 3.3A AXL |
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