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參數(shù)資料
| 型號： | HGTP7N60C3DS9A |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB |
| 中文描述： | 晶體管| IGBT的|正陳| 600V的五（巴西）國際消費電子展|第14A一（c）|至263AB |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 216K |
| 代理商： | HGTP7N60C3DS9A |
5
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
M
,
2
10
20
30
10
100
200
1
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 50
, L = 1mH
V
GE
= 15V
V
GE
= 10V
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θ
JC
= 2.1
o
C/W
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
100
200
300
400
500
600
0
10
20
30
40
T
J
= 150
o
C, V
GE
= 15V, R
G
= 50
, L = 1mH
50
C
OES
C
RES
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
1000
1200
C
C
IES
FREQUENCY = 1MHz
800
600
400
200
V
G
,
V
C
,
Q
G
, GATE CHARGE (nC)
0
300
200
400
500
600
15
12.5
10
7.5
5
0
5
10
15
20
25
30
0
100
2.5
V
CE
= 600V
V
CE
= 400V
V
CE
= 200V
I
G(REF)
= 1.044mA,
R
L
= 50
, T
C
= 25
o
C
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
10
-1
10
-2
10
0
Z
θ
J
,
10
-1
10
-2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
t
1
t
2
P
D
HGTP7N60C3D, HGT1S7N60C3DS
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