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參數(shù)資料
| 型號(hào)： | HGTP7N60C3DS9A |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB |
| 中文描述： | 晶體管| IGBT的|正陳| 600V的五（巴西）國際消費(fèi)電子展|第14A一（c）|至263AB |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 216K |
| 代理商： | HGTP7N60C3DS9A |
4
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR
TO
EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
(Continued)
t
d
,
10
20
30
2
5
11
14
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
50
17
20
40
V
GE
= 10V
V
GE
= 15V
T
J
= 150
o
C, R
G
= 50
, L = 1mH, V
CE(PK)
= 480V
8
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
400
350
250
200
8
11
14
17
20
T
J
= 150
o
C, R
G
= 50
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V or 15V
300
5
500
450
2
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
5
10
100
V
GE
= 15V
V
GE
= 10V
200
2
8
11
14
17
20
5
T
J
= 150
o
C, R
G
= 50
, L = 1mH, V
CE(PK)
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
100
200
300
150
2
8
11
14
17
20
5
T
J
= 150
o
C, R
G
= 50
, L = 1mH, V
CE(PK)
= 480V
250
V
GE
= 10V or 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
40
E
O
,
μ
J
100
500
1000
2000
2
8
11
14
17
20
5
T
J
= 150
o
C, R
G
= 50
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
500
1000
3000
100
V
GE
= 10V OR 15V
2
8
11
14
17
20
5
T
J
= 150
o
C, R
G
= 50
, L = 1mH, V
CE(PK)
= 480V
HGTP7N60C3D, HGT1S7N60C3DS
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