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參數(shù)資料
| 型號： | HGTP3N60C3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 72 MACROCELL 3.3 VOLT ISP CPLD |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 156K |
| 代理商： | HGTP3N60C3 |
8
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
TO-252AA
SURFACE MOUNT JEDEC TO-252AA PLASTIC PACKAGE
TO-252AA
16mm TAPE AND REEL
b
2
E
D
L
3
L
e
b
1
b
1
3
A
L
c
SEATING
PLANE
BACK VIEW
2
H
1
A
1
b
3
e
1
J
1
L
1
TERM. 4
0.265
(6.7)
MINIMUM PAD SIZE RECOMMENDED FOR
SURFACE-MOUNTED APPLICATIONS
0.265 (6.7)
0.070 (1.8)
0.118 (3.0)
0.063 (1.6) TYP
0.090 (2.3) TYP
SYMBOL
A
A
1
b
b
1
b
2
b
3
c
D
E
e
e
1
H
1
J
1
L
L
1
L
2
L
3
NOTES:
1. These dimensions are within allowable dimensions of Rev. B of
JEDEC TO-252AA outline dated 9-88.
2. L
3
and b
3
dimensions establish a minimum mounting surface for
terminal 4.
3. Solder finish uncontrolled in this area.
4. Dimension (without solder).
5. Add typically 0.002 inches (0.05mm) for solder plating.
6. L
1
is the terminal length for soldering.
7. Positionofleadtobemeasured0.090inches(2.28mm)frombottom
of dimension D.
8. Controlling dimension: Inch.
9. Revision 9 dated 5-99.
INCHES
MIN
0.086
0.018
0.028
0.033
0.205
0.190
0.018
0.270
0.250
0.090 TYP
0.180 BSC
0.035
0.040
0.100
0.020
0.025
0.170
MILLIMETERS
MIN
2.19
0.46
0.72
0.84
5.21
4.83
0.46
6.86
6.35
2.28 TYP
4.57 BSC
0.89
1.02
2.54
0.51
0.64
4.32
NOTES
-
4, 5
4, 5
4
4, 5
2
4, 5
-
-
7
7
-
-
-
4, 6
3
2
MAX
0.094
0.022
0.032
0.040
0.215
-
0.022
0.290
0.265
MAX
2.38
0.55
0.81
1.01
5.46
-
0.55
7.36
6.73
0.045
0.045
0.115
-
0.040
-
1.14
1.14
2.92
-
1.01
-
2.0mm
4.0mm
1.5mm
DIA. HOLE
8.0mm
16mm
USER DIRECTION OF FEED
C
1.75mm
330mm
50mm
13mm
22.4mm
16.4mm
COVER TAPE
GENERAL INFORMATION
1. 2500 PIECES PER REEL.
2. ORDER IN MULTIPLES OF FULL REELS ONLY.
3. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP3N60C3D | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP3N60C3D_07 | 制造商:HARRIS 制造商全稱:HARRIS 功能描述:6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP5N120 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| HGTP5N120BN | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:21A, 1200V, NPT Series N-Channel IGBTs |
| HGTP5N120BND | 功能描述:IGBT 晶體管 21a 1200V IGBT NPT Series N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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