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參數(shù)資料
| 型號： | HGTP3N60C3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 72 MACROCELL 3.3 VOLT ISP CPLD |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 156K |
| 代理商： | HGTP3N60C3 |
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
ALL TYPES
600
UNITS
V
Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
CM
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Single Pulse Avalanche Energy at T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation Total at T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range. . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
17
8
40
±
20
±
30
A
A
A
V
V
15A at 600V
12mJ at 3A
70
0.56
-55 to 150
W
W/
o
C
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= 600V
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
-
-
250
μ
A
-
-
2.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 3A,
V
GE
= 15V
-
2.0
2.7
V
-
1.6
2.2
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
μ
A, V
CE
= 600V
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 50
,
V
GE
= 15V
L = 200
μ
H, V
CE
= 600V
4.5
6.1
7.0
V
Gate to Emitter Leakage Current
I
GES
-
-
±
250
nA
Switching SOA
SSOA
15
-
-
A
Pulsed Avalanche Energy
E
AS
I
CE
= 3A, L = 2.7mH
12
-
-
mJ
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 3A, V
CE
= 300V
-
8.8
-
V
On-State Gate Charge
Q
g(ON)
I
C
= 3A,
V
CE
= 300V
V
GE
= 15V
-
21
25
nC
V
GE
= 20V
-
26
32
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 3A
V
CE
= 390V
V
GE
= 15V
R
G
= 50
L = 1mH
Test Circuit - Figure 20
-
6
-
ns
Current Rise Time
t
rI
-
11
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
73
-
ns
Current Fall Time
t
fI
-
47
-
ns
Turn-On Energy (Note 3)
E
ON1
-
37
-
μ
J
Turn-On Energy (Note 3)
E
ON2
-
55
70
μ
J
Turn-Off Energy (Note 2)
E
OFF
-
25
35
μ
J
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
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