- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄296101 > HGTP3N60A4D_NL (FAIRCHILD SEMICONDUCTOR CORP) 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode PDF資料下載
參數(shù)資料
| 型號(hào)： | HGTP3N60A4D_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 17 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大?。?/td> | 113K |
| 代理商： | HGTP3N60A4D_NL |
2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves Unless Otherwise Specied (Continued)
0
50
100
50
75
100
TC, CASE TEMPERATURE (
oC)
150
125
25
150
250
200
E
TOT
A
L
,T
O
T
A
L
SWITCHING
ENERGY
LOSS
(
J)
ICE = 4.5A
ICE = 3A
ICE = 1.5A
ETOTAL = EON2 + EOFF
RG = 50, L = 1mH, VCE = 390V, VGE = 15V
30
10
100
RG, GATE RESISTANCE ()
100
3
1000
E
TOT
A
L
,T
O
T
AL
SWITCHING
ENERGY
LOSS
(
J)
1000
ICE = 4.5A
ICE = 3A
ICE = 1.5A
TJ = 125
oC, L = 1mH, V
CE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
C,
CAP
A
CIT
ANCE
(pF)
0
204060
80
100
0
200
400
500
700
300
600
100
FREQUENCY = 1MHz
CIES
COES
CRES
VGE, GATE TO EMITTER VOLTAGE (V)
8
2.0
10
12
2.1
2.4
2.2
14
16
2.6
2.7
V
CE
,COLLECT
OR
T
O
EMITTER
V
O
L
T
A
G
E
(V)
2.3
2.5
DUTY CYCLE < 0.5%, TJ = 25
oC
PULSE DURATION = 250
s
ICE = 4.5A
ICE = 1.5A
ICE = 3A
12
45
I EC
,FOR
W
ARD
CURRENT
(A)
VEC, FORWARD VOLTAGE (V)
03
0
8
12
16
20
4
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%,
25oC
125oC
48
32
16
0
t rr
,RECO
VER
Y
TIMES
(ns)
IEC, FORWARD CURRENT (A)
1
64
40
24
8
23
56
4
125oC trr
dIEC/dt = 200A/s
25oC trr
25oC ta
25oC tb
125oC ta
125oC tb
HGT1S3N60A4DS, HGTP3N60A4D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTP7N60A4_NL | 600V SMPS Series N-Channel IGBT |
| HGXO0A-N-SM5-FREQ,10/40/-/M | CRYSTAL OSCILLATOR, CLOCK, 0.46 MHz - 50 MHz, CMOS OUTPUT |
| HGXO2F-N-50.0M,10/40/-/M | CRYSTAL OSCILLATOR, CLOCK, 50 MHz, CMOS OUTPUT |
| HGXO2G-N-32.0M,10/40/-/M | CRYSTAL OSCILLATOR, CLOCK, 32 MHz, CMOS OUTPUT |
| HGXO3A-N-460.0K,10/10/-/C | CRYSTAL OSCILLATOR, CLOCK, 0.46 MHz, CMOS OUTPUT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP3N60B3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60B3D | 制造商:Harris Corporation 功能描述: |
| HGTP3N60B3R4724 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60C3D | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。